- 专利标题: Image sensor having a passivation layer exposing at least a main pixel array region and methods of fabricating the same
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申请号: US11044135申请日: 2005-01-27
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公开(公告)号: US20060011813A1公开(公告)日: 2006-01-19
- 发明人: Young Park , Ki Kim , Bum Kim , Jeong Bae , Yu Ahn , Jung Ahn , Soo Lee , Yong Lee , Sung Hwang
- 申请人: Young Park , Ki Kim , Bum Kim , Jeong Bae , Yu Ahn , Jung Ahn , Soo Lee , Yong Lee , Sung Hwang
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR04-55760 20040716
- 主分类号: H01L27/00
- IPC分类号: H01L27/00
摘要:
A CMOS image sensor with improved sensitivity includes a main pixel array region of an active pixel array region formed on a semiconductor substrate. A passivation layer is formed over the sensor, and it is at least partially removed from the main pixel array region, such that incident light being detected by the main pixel array does not pass through the passivation layer. Optical absorption and refraction caused by the material of the passivation layer are eliminated, resulting in an image sensor with improved optical sensitivity.
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