专利检索 ap:("Young Park" OR "Ki Kim" OR "Bum Kim" OR "Jeong Bae" OR "Yu Ahn" OR "Jung Ahn" OR "Soo Lee" OR "Yong Lee" OR "Sung Hwang") AND inv:"Yu Ahn" 第 1 页

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发明申请
Image sensor having a passivation layer exposing at least a main pixel array region and methods of fabricating the same 有权

公开(公告)号：US20060011813A1

公开(公告)日：2006-01-19

申请号：US11044135

申请日：2005-01-27

申请人： Young Park , Ki Kim , Bum Kim , Jeong Bae , Yu Ahn , Jung Ahn , Soo Lee , Yong Lee , Sung Hwang

发明人： Young Park , Ki Kim , Bum Kim , Jeong Bae , Yu Ahn , Jung Ahn , Soo Lee , Yong Lee , Sung Hwang

IPC分类号： H01L27/00

CPC分类号： H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14645 , H01L27/14685

摘要： A CMOS image sensor with improved sensitivity includes a main pixel array region of an active pixel array region formed on a semiconductor substrate. A passivation layer is formed over the sensor, and it is at least partially removed from the main pixel array region, such that incident light being detected by the main pixel array does not pass through the passivation layer. Optical absorption and refraction caused by the material of the passivation layer are eliminated, resulting in an image sensor with improved optical sensitivity.