发明申请
- 专利标题： Methods of base formation in a BiCMOS process
- 专利标题（中）： BiCMOS工艺中碱形成的方法
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申请号： US11231385申请日： 2005-09-21
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公开(公告)号： US20060017066A1公开(公告)日： 2006-01-26
- 发明人: Peter Geiss , Marwan Khater , Qizhi Liu , Randy Mann , Robert Purtell , BethAnn Rainey , Jae-Sung Rieh , Andreas Stricker
- 申请人： Peter Geiss , Marwan Khater , Qizhi Liu , Randy Mann , Robert Purtell , BethAnn Rainey , Jae-Sung Rieh , Andreas Stricker
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： H01L31/109
- IPC分类号： H01L31/109
摘要：
Methods for fabricating a heterojunction bipolar transistor having a raised extrinsic base is provided in which the base resistance is reduced by forming a silicide atop the raised extrinsic base that extends to the emitter region in a self-aligned manner. The silicide formation is incorporated into a BiCMOS process flow after the raised extrinsic base has been formed. The present invention also provides a heterojunction bipolar transistor having a raised extrinsic base and a silicide located atop the raised extrinsic base. The silicide atop the raised extrinsic base extends to the emitter in a self-aligned manner. The emitter is separated from the silicide by a spacer.
公开/授权文献
- US07390721B2 Methods of base formation in a BiCMOS process 公开/授权日：2008-06-24
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