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    Methods of base formation in a BiCMOS process
    1.
    发明申请
    Methods of base formation in a BiCMOS process 失效
    BiCMOS工艺中碱形成的方法

    公开(公告)号：US20060017066A1

    公开(公告)日：2006-01-26

    申请号：US11231385

    申请日：2005-09-21

    申请人： Peter Geiss ,  Marwan Khater ,  Qizhi Liu ,  Randy Mann ,  Robert Purtell ,  BethAnn Rainey ,  Jae-Sung Rieh ,  Andreas Stricker

    发明人： Peter Geiss ,  Marwan Khater ,  Qizhi Liu ,  Randy Mann ,  Robert Purtell ,  BethAnn Rainey ,  Jae-Sung Rieh ,  Andreas Stricker

    IPC分类号： H01L31/109

    CPC分类号： H01L29/66242 ,  H01L21/28518 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/0804 ,  H01L29/456 ,  H01L29/7371

    摘要： Methods for fabricating a heterojunction bipolar transistor having a raised extrinsic base is provided in which the base resistance is reduced by forming a silicide atop the raised extrinsic base that extends to the emitter region in a self-aligned manner. The silicide formation is incorporated into a BiCMOS process flow after the raised extrinsic base has been formed. The present invention also provides a heterojunction bipolar transistor having a raised extrinsic base and a silicide located atop the raised extrinsic base. The silicide atop the raised extrinsic base extends to the emitter in a self-aligned manner. The emitter is separated from the silicide by a spacer.

    摘要翻译： 提供了制造具有凸起非本征基极的异质结双极晶体管的方法，其中通过在以自对准方式延伸到发射极区域的凸起的外部基极之上形成硅化物来降低基极电阻。 在形成凸起的外基之后，将硅化物形成结合到BiCMOS工艺流程中。 本发明还提供了一种异质结双极晶体管，其具有凸起的外部基极和位于凸起外部基极顶部的硅化物。 凸起的外基极上面的硅化物以自对准的方式延伸到发射极。 发射极通过间隔物与硅化物分离。

    BIPOLAR TRANSISTOR HAVING RAISED EXTRINSIC BASE WITH SELECTABLE SELF-ALIGNMENT AND METHODS OF FORMING SAME
    3.
    发明申请
    BIPOLAR TRANSISTOR HAVING RAISED EXTRINSIC BASE WITH SELECTABLE SELF-ALIGNMENT AND METHODS OF FORMING SAME 有权
    具有可选择的自对准的提升的超级基座的双极晶体管及其形成方法

    公开(公告)号：US20050048735A1

    公开(公告)日：2005-03-03

    申请号：US10604988

    申请日：2003-08-29

    申请人： Marwan Khater ,  James Dunn ,  David Harame ,  Alvin Joseph ,  Qizhi Liu ,  Francois Pagette ,  Stephen St. Onge ,  Andreas Stricker

    发明人： Marwan Khater ,  James Dunn ,  David Harame ,  Alvin Joseph ,  Qizhi Liu ,  Francois Pagette ,  Stephen St. Onge ,  Andreas Stricker

    IPC分类号： H01L21/331 ,  H01L29/10 ,  H01L29/732 ,  H01L29/737 ,  H01L21/76

    CPC分类号： H01L29/66287 ,  H01L29/1004 ,  H01L29/66242 ,  H01L29/732 ,  H01L29/7378

    摘要： A bipolar transistor with raised extrinsic base and selectable self-alignment between the extrinsic base and the emitter is disclosed. The fabrication method may include the formation of a predefined thickness of a first extrinsic base layer of polysilicon or silicon on an intrinsic base. A dielectric landing pad is then formed by lithography on the first extrinsic base layer. Next, a second extrinsic base layer of polysilicon or silicon is formed on top of the dielectric landing pad to finalize the raised extrinsic base total thickness. An emitter opening is formed using lithography and RIE, where the second extrinsic base layer is etched stopping on the dielectric landing pad. The degree of self-alignment between the emitter and the raised extrinsic base is achieved by selecting the first extrinsic base layer thickness, the dielectric landing pad width, and the spacer width.

    摘要翻译： 公开了一种具有凸起的外在基极和在本征基极和发射极之间可选自对准的双极晶体管。 制造方法可以包括在内在基底上形成多晶硅或硅的第一非本征基极层的预定厚度。 然后通过在第一非本征基层上的光刻形成电介质着色焊盘。 接下来，在电介质贴片垫的顶部上形成第二非多晶硅或硅的非本征基极层，以最终确定凸出的非本征基本总厚度。 使用光刻和RIE形成发射器开口，其中第二外部基极层被蚀刻停止在电介质着色焊盘上。 通过选择第一非本征基极层厚度，电介质着陆焊盘宽度和间隔物宽度来实现发射极和凸出的外部基极之间的自对准程度。

    Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same
    4.
    发明申请
    Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same 失效
    双极晶体管具有可选择的自对准的外部基极和其形成方法

    公开(公告)号：US20060081934A1

    公开(公告)日：2006-04-20

    申请号：US11289915

    申请日：2005-11-30

    申请人： Marwan Khater ,  James Dunn ,  David Harame ,  Alvin Joseph ,  Qizhi Liu ,  Francois Pagette ,  Stephen Onge ,  Andreas Stricker

    发明人： Marwan Khater ,  James Dunn ,  David Harame ,  Alvin Joseph ,  Qizhi Liu ,  Francois Pagette ,  Stephen Onge ,  Andreas Stricker

    IPC分类号： H01L23/62

    CPC分类号： H01L29/66287 ,  H01L29/1004 ,  H01L29/66242 ,  H01L29/732 ,  H01L29/7378

    摘要： A bipolar transistor with raised extrinsic base and selectable self-alignment between the extrinsic base and the emitter is disclosed. The fabrication method may include the formation of a predefined thickness of a first extrinsic base layer of polysilicon or silicon on an intrinsic base. A dielectric landing pad is then formed by lithography on the first extrinsic base layer. Next, a second extrinsic base layer of polysilicon or silicon is formed on top of the dielectric landing pad to finalize the raised extrinsic base total thickness. An emitter opening is formed using lithography and RIE, where the second extrinsic base layer is etched stopping on the dielectric landing pad. The degree of self-alignment between the emitter and the raised extrinsic base is achieved by selecting the first extrinsic base layer thickness, the dielectric landing pad width, and the spacer width.

    摘要翻译： 公开了一种具有凸起的外在基极和在本征基极和发射极之间可选自对准的双极晶体管。 制造方法可以包括在内在基底上形成多晶硅或硅的第一非本征基极层的预定厚度。 然后通过在第一非本征基层上的光刻形成电介质着色焊盘。 接下来，在电介质贴片垫的顶部上形成第二非多晶硅或硅的非本征基极层，以最终确定凸出的非本征基本总厚度。 使用光刻和RIE形成发射器开口，其中第二外部基极层被蚀刻停止在电介质着色焊盘上。 通过选择第一非本征基极层厚度，电介质着陆焊盘宽度和间隔物宽度来实现发射极和凸出的外部基极之间的自对准程度。

    TUNEABLE SEMICONDUCTOR DEVICE
    5.
    发明申请
    TUNEABLE SEMICONDUCTOR DEVICE 失效
    可调谐半导体器件

    公开(公告)号：US20070215978A1

    公开(公告)日：2007-09-20

    申请号：US11568156

    申请日：2004-04-22

    申请人： Andreas Stricker ,  David Sheridan ,  Jae-Sung Rieh ,  Greg Freeman ,  Steven Voldman ,  Stephen Onge

    发明人： Andreas Stricker ,  David Sheridan ,  Jae-Sung Rieh ,  Greg Freeman ,  Steven Voldman ,  Stephen Onge

    IPC分类号： H01L29/66

    CPC分类号： H01L29/66363 ,  H01L29/0821 ,  H01L29/0834 ,  H01L29/66242 ,  H01L29/7378 ,  H01L29/74 ,  H01L29/861 ,  H01L29/872 ,  H01L29/93

    摘要： Disclosed is a method of forming a semiconductor structure that includes a discontinuous non-planar sub-collector having a different polarity than the underlying substrate. In addition, this structure includes an active area (collector) above the sub-collector, a base above the active area, and an emitter above the base. The distance between the discontinuous portions of the discontinuous sub-collector tunes the performance characteristics of the semiconductor structure. The performance characteristics that are tunable include breakdown voltage, unity current gain cutoff frequency, unity power gain cutoff frequency, transit frequency, current density, capacitance range, noise injection, minority carrier injection and trigger and holding voltage.

    摘要翻译： 公开了一种形成半导体结构的方法，该半导体结构包括具有与下面的衬底不同的极性的不连续的非平面子集电极。 此外，该结构包括在副集电极上方的有源区（集电极），有源区上方的基极和基极上方的发射极。 不连续子集电极的不连续部分之间的距离调节了半导体结构的性能特性。 可调谐的性能特点包括击穿电压，单位电流增益截止频率，单位功率增益截止频率，传输频率，电流密度，电容范围，噪声注入，少数载流子注入以及触发和保持电压。

    Tuneable semiconductor device with discontinuous portions in the sub-collector
    6.
    发明授权
    Tuneable semiconductor device with discontinuous portions in the sub-collector 失效
    在子集电极中具有不连续部分的可调谐半导体器件

    公开(公告)号：US07709930B2

    公开(公告)日：2010-05-04

    申请号：US11568156

    申请日：2004-04-22

    申请人： Andreas Stricker ,  David Sheridan ,  Jae-Sung Rieh ,  Gregory Freeman ,  Steven Voldman ,  Stephen A. St. Onge

    发明人： Andreas Stricker ,  David Sheridan ,  Jae-Sung Rieh ,  Gregory Freeman ,  Steven Voldman ,  Stephen A. St. Onge

    IPC分类号： H01L29/66

    CPC分类号： H01L29/66363 ,  H01L29/0821 ,  H01L29/0834 ,  H01L29/66242 ,  H01L29/7378 ,  H01L29/74 ,  H01L29/861 ,  H01L29/872 ,  H01L29/93

    摘要： Disclosed is a method of forming a semiconductor structure that includes a discontinuous non-planar sub-collector having a different polarity than the underlying substrate. In addition, this structure includes an active area (collector) above the sub-collector, a base above the active area, and an emitter above the base. The distance between the discontinuous portions of the discontinuous sub-collector tunes the performance characteristics of the semiconductor structure. The performance characteristics that are tunable include breakdown voltage, unity current gain cutoff frequency, unity power gain cutoff frequency, transit frequency, current density, capacitance range, noise injection, minority carrier injection and trigger and holding voltage.

    摘要翻译： 公开了一种形成半导体结构的方法，该半导体结构包括具有与下面的衬底不同的极性的不连续的非平面子集电极。 此外，该结构包括在副集电极上方的有源区（集电极），有源区上方的基极和基极上方的发射极。 不连续子集电极的不连续部分之间的距离调节了半导体结构的性能特性。 可调谐的性能特点包括击穿电压，单位电流增益截止频率，单位功率增益截止频率，传输频率，电流密度，电容范围，噪声注入，少数载流子注入以及触发和保持电压。

    Bipolar transistor with collector having an epitaxial Si:C region
    8.
    发明申请
    Bipolar transistor with collector having an epitaxial Si:C region 失效
    具有集电极的双极晶体管具有外延Si：C区域

    公开(公告)号：US20060289852A1

    公开(公告)日：2006-12-28

    申请号：US11511047

    申请日：2006-08-28

    申请人： Gregory Freeman ,  Marwan Khater ,  Rajendran Krishnasamy ,  Kathryn Schonenberg ,  Andreas Stricker

    发明人： Gregory Freeman ,  Marwan Khater ,  Rajendran Krishnasamy ,  Kathryn Schonenberg ,  Andreas Stricker

    IPC分类号： H01L31/00

    CPC分类号： H01L29/66068 ,  H01L29/2003 ,  H01L29/66242

    摘要： A structure and method where C is incorporated into the collector region of a heterojunction bipolar device by a method which does not include C ion implantation are provided. In the present invention, C is incorporated into the collector by epitaxy in a perimeter trench etched into the collector region to better control the carbon profile and location. The trench is formed by etching the collector region using the trench isolation regions and a patterned layer over the center part of the collector as masks. Then, Si:C is grown using selective epitaxy inside the trench to form a Si:C region with sharp and well-defined edges. The depth, width and C content can be optimized to control and tailor the collector implant diffusion and to reduce the perimeter component of parasitic CCB.

    摘要翻译： 提供了通过不包括C离子注入的方法将C并入到异质结双极器件的集电极区域中的结构和方法。 在本发明中，通过在刻蚀到集电极区域的周边沟槽中外延生长将C引入集电体，以更好地控制碳分布和位置。 通过使用沟槽隔离区域将集电极区域和在集电体的中心部分上的图案化层作为掩模来形成沟槽。 然后，使用沟槽内部的选择性外延生长Si：C以形成具有清晰且明确界定的边缘的Si：C区域。 可以优化深度，宽度和C含量以控制和定制集电极注入扩散并减少寄生C CB的周边分量。

    Bipolar transistor with a very narrow emitter feature
    9.
    发明申请
    Bipolar transistor with a very narrow emitter feature 失效
    双极晶体管具有非常窄的发射极特性

    公开(公告)号：US20050082642A1

    公开(公告)日：2005-04-21

    申请号：US10978775

    申请日：2004-11-01

    申请人： Gregory Freeman ,  Marwan Khater ,  Francois Pagette ,  Andreas Stricker

    发明人： Gregory Freeman ,  Marwan Khater ,  Francois Pagette ,  Andreas Stricker

    IPC分类号： H01L21/331 ,  H01L29/08 ,  H01L29/732 ,  H01L21/8222 ,  H01L27/082 ,  H01L29/70 ,  H01L31/11

    CPC分类号： H01L29/66287 ,  H01L29/0804 ,  H01L29/732

    摘要： A double-polysilicon, self-aligned bipolar transistor has a collector region formed in a doped semiconductor substrate, an intrinsic counterdoped base formed on the surface of the substrate and a doped intrinsic emitter formed in the surface of the intrinsic base. An etch stop insulator layer overlies the intrinsic base layer above the collector. A base contact layer of a conductive material overlies the etch stop dielectric layer and the intrinsic base layer. A dielectric layer overlies the base contact layer. A wide window extends through the insulator layer and the base contact layer down to the insulator layer. An island or a peninsula is formed in the wide window leaving at least one narrowed window within the wide window, with sidewall spacers in either the wide window or the narrowed window. The narrowed windows are filled with doped polysilicon forming an extrinsic emitter with the intrinsic emitter formed below the extrinsic emitter in the surface of the intrinsic base.

    摘要翻译： 双重多晶硅，自对准双极晶体管具有在掺杂半导体衬底中形成的集电极区域，形成在衬底表面上的本征反掺杂基底和形成在本征基底表面的掺杂本征发射极。 蚀刻停止绝缘体层覆盖在收集器上方的本征基极层。 导电材料的基极接触层覆盖在蚀刻停止介电层和本征基极层之间。 电介质层覆盖在基底接触层上。 宽窗口延伸穿过绝缘体层和基底接触层向下延伸到绝缘体层。 在宽窗口中形成岛或半岛，在宽窗口内留下至少一个变窄的窗口，在宽窗口或狭窄窗口中具有侧壁间隔物。 变窄的窗口填充有掺杂的多晶硅，其形成外部发射极，本征发射极在本征基极表面的外部发射极之下形成。

    BIPOLAR TRANSISTOR WITH COLLECTOR HAVING AN EPITAXIAL Si:C REGION
    10.
    发明申请
    BIPOLAR TRANSISTOR WITH COLLECTOR HAVING AN EPITAXIAL Si:C REGION 有权
    具有收集器的双极晶体管具有外延Si：C区域

    公开(公告)号：US20060154476A1

    公开(公告)日：2006-07-13

    申请号：US10905510

    申请日：2005-01-07

    申请人： Gregory Freeman ,  Marwan Khater ,  Rajendran Krishnasamy ,  Kathryn Schonenberg ,  Andreas Stricker

    发明人： Gregory Freeman ,  Marwan Khater ,  Rajendran Krishnasamy ,  Kathryn Schonenberg ,  Andreas Stricker

    IPC分类号： H01L21/4763

    CPC分类号： H01L29/66068 ,  H01L29/2003 ,  H01L29/66242

    摘要： A structure and method where C is incorporated into the collector region of a heterojunction bipolar device by a method which does not include C ion implantation are provided. In the present invention, C is incorporated into the collector by epitaxy in a perimeter trench etched into the collector region to better control the carbon profile and location. The trench is formed by etching the collector region using the trench isolation regions and a patterned layer over the center part of the collector as masks. Then, Si:C is grown using selective epitaxy inside the trench to form a Si:C region with sharp and well-defined edges. The depth, width and C content can be optimized to control and tailor the collector implant diffusion and to reduce the perimeter component of parasitic CCB.

    摘要翻译： 提供了通过不包括C离子注入的方法将C并入到异质结双极器件的集电极区域中的结构和方法。 在本发明中，通过在刻蚀到集电极区域的周边沟槽中外延生长将C引入集电体，以更好地控制碳分布和位置。 通过使用沟槽隔离区域将集电极区域和在集电体的中心部分上的图案化层作为掩模来形成沟槽。 然后，使用沟槽内部的选择性外延生长Si：C以形成具有清晰且明确界定的边缘的Si：C区域。 可以优化深度，宽度和C含量以控制和定制集电极注入扩散并减少寄生C CB的周边分量。