Invention Application
US20060021970A1 Method and apparatus for non-invasive measurement and analysis of semiconductor process parameters 审中-公开
用于半导体工艺参数非侵入性测量和分析的方法和装置

  • Patent Title: Method and apparatus for non-invasive measurement and analysis of semiconductor process parameters
  • Patent Title (中): 用于半导体工艺参数非侵入性测量和分析的方法和装置
  • Application No.: US11023548
    Application Date: 2004-12-29
  • Publication No.: US20060021970A1
    Publication Date: 2006-02-02
  • Inventor: Richard Parsons
  • Applicant: Richard Parsons
  • Applicant Address: JP Tokyo
  • Assignee: Tokyo Electron Limited
  • Current Assignee: Tokyo Electron Limited
  • Current Assignee Address: JP Tokyo
  • Main IPC: G01L21/30
  • IPC: G01L21/30 H01L21/306
Method and apparatus for non-invasive measurement and analysis of semiconductor process parameters
Abstract:
A RF sensor for sensing and analyzing parameters of plasma processing. The RF sensor is provided with a plasma processing tool and an antenna for receiving RF energy radiated from the plasma processing tool. The antenna is located proximate to the plasma processing tool so as to be non-invasive. Additionally, the RF sensor may be configured for wideband reception of multiple harmonics of the RF energy that is radiated from the plasma processing tool. Further, the RF sensor may be coupled to a high pass filter and a processor for processing the received RF energy. Additionally, the antenna may be located within an enclosure with absorbers to reduce the interference experienced by the RF sensor. Additionally, a tool control may be coupled to the processor to provided to adjust and maintain various parameters of plasma processing according to the information provided by the received RF energy.
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