Vanity plate assembly
    1.
    发明授权

    公开(公告)号:US10796612B1

    公开(公告)日:2020-10-06

    申请号:US16538697

    申请日:2019-08-12

    Inventor: Richard Parsons

    Abstract: A vanity plate assembly includes a plate that has indicia printed thereon. A strip is positionable against the plate. A pair of brackets is provided and each of the brackets releasably engages the strip. A pair of fasteners is each extendable through the plate, the strip and the brackets for coupling the plate, the strip and the brackets together. A pair of couplers is provided and each of the couplers releasably engages a respective one of the brackets. Each of the couplers releasably engages a respective one of a pair of chain supports on a hitch receiver of a vehicle. In this way the plate is suspended beneath the hitch receiver without interfering with using the hitch receiver.

    Method and apparatus for wall film monitoring
    2.
    发明申请
    Method and apparatus for wall film monitoring 失效
    墙膜监测方法和装置

    公开(公告)号:US20070020776A1

    公开(公告)日:2007-01-25

    申请号:US11517389

    申请日:2006-09-08

    Abstract: A wall film monitoring system includes first and second microwave mirrors in a plasma processing chamber each having a concave surface. The concave surface of the second mirror is oriented opposite the concave surface of the first mirror. A power source is coupled to the first mirror and configured to produce a microwave signal. A detector is coupled to at least one of the first mirror and the second mirror and configured to measure a vacuum resonance voltage of the microwave signal. A control system is connected to the detector that compares a first measured voltage and a second measured voltage and determines whether the second voltage exceeds a threshold value. A method of monitoring wall film in a plasma chamber includes loading a wafer in the chamber, setting a frequency of a microwave signal output to a resonance frequency, and measuring a first vacuum resonance voltage of the microwave signal. The method includes processing the wafer, measuring a second vacuum resonance voltage of the microwave signal, and determining whether the second measured voltage exceeds a threshold value using the first measured voltage as a reference value.

    Abstract translation: 墙膜监测系统包括等离子体处理室中的具有凹面的第一和第二微波反射镜。 第二反射镜的凹面与第一反射镜的凹面相对。 电源耦合到第一反射镜并且被配置为产生微波信号。 检测器耦合到第一反射镜和第二反射镜中的至少一个并且被配置为测量微波信号的真空谐振电压。 控制系统连接到检测器,该检测器比较第一测量电压和第二测量电压,并确定第二电压是否超过阈值。 一种监测等离子体室中的壁膜的方法包括将晶片装载在室中,将微波信号输出的频率设定为谐振频率,以及测量微波信号的第一真空谐振电压。 该方法包括处理晶片,测量微波信号的第二真空谐振电压,以及使用第一测量电压作为参考值来确定第二测量电压是否超过阈值。

    Man-machine interface for monitoring and controlling a process
    3.
    发明授权
    Man-machine interface for monitoring and controlling a process 失效
    用于监控和控制过程的人机界面

    公开(公告)号:US07158845B2

    公开(公告)日:2007-01-02

    申请号:US10493470

    申请日:2002-10-31

    CPC classification number: G05B19/409 G05B2219/31435 G05B2219/45031

    Abstract: A process monitoring system (100) for monitoring a plasma processing system. The process monitoring system (100) includes a plurality of processing subsystems (120), and a control system (110) coupled to the processing subsystems (120). The control system (110) is configured to receive monitor data from the processing subsystems (120) and send control data to the processing subsystems (120). The process monitoring system (100) also includes an external interface (140) coupled to the control system (110), where the external interface (140) includes a paging system. The process monitoring system further includes a man-machine interface (MMI) coupled to the control system (110). The MMI is configured to display the monitor data, display the control data, and access the paging system.

    Abstract translation: 一种用于监测等离子体处理系统的过程监控系统(100)。 过程监控系统(100)包括多个处理子系统(120)和耦合到处理子系统(120)的控制系统(110)。 控制系统(110)被配置为从处理子系统(120)接收监视数据,并将控制数据发送到处理子系统(120)。 过程监控系统(100)还包括耦合到控制系统(110)的外部接口(140),其中外部接口(140)包括寻呼系统。 过程监控系统还包括耦合到控制系统(110)的人机界面(MMI)。 MMI配置为显示监视数据,显示控制数据,并访问寻呼系统。

    Method and apparatus for non-invasive measurement and analysis of semiconductor process parameters

    公开(公告)号:US20050183821A1

    公开(公告)日:2005-08-25

    申请号:US11023383

    申请日:2004-12-29

    Inventor: Richard Parsons

    CPC classification number: H01J37/32174 H01J37/32935

    Abstract: A RF sensor for sensing and analyzing parameters of plasma processing. The RF sensor is provided with a plasma processing tool and an antenna for receiving RF energy radiated from the plasma processing tool. The antenna is located proximate to the plasma processing tool so as to be non-invasive. Additionally, the RF sensor may be configured for wideband reception of multiple harmonics of the RF energy that is radiated from the plasma processing tool. Further, the RF sensor may be coupled to a high pass filter and a processor for processing the received RF energy. Additionally, the antenna may be located within an enclosure with absorbers to reduce the interference experienced by the RF sensor. Additionally, a tool control may be coupled to the processor to provided to adjust and maintain various parameters of plasma processing according to the information provided by the received RF energy.

    Electrical impedance matching system and method
    5.
    发明授权
    Electrical impedance matching system and method 有权
    电阻抗匹配系统及方法

    公开(公告)号:US06313584B1

    公开(公告)日:2001-11-06

    申请号:US09508103

    申请日:2000-04-24

    CPC classification number: H01J37/32082 H01J37/32183

    Abstract: A system and method for processing substrates having an improved matching system. A matching controller (1) is utilized to control multiple matching networks (MNA, MNB, MNC), thus providing improved, more rapid and stable matching. The matching controller can also automatically set up initial matching conditions required during and immediately after plasma initiation, to thereby provide faster and more reliable initial matching, and reduced operator involvement. The system also provides improved instrumentation, for more accurate phase and amplitude detection, and an improved arrangement of power detectors (6A, 6B, 6C). The matching network (MNA, MNB, MNC) also incorporates a circuit for reliable control of tunable elements in a matching network, and a device for protecting tunable elements against damage are also provided.

    Abstract translation: 一种用于处理具有改进的匹配系统的衬底的系统和方法。 匹配控制器(1)用于控制多个匹配网络(MNA,MNB,MNC),从而提供改进的,更快速和稳定的匹配。 匹配控制器还可以自动设置等离子体启动期间和之后所需的初始匹配条件,从而提供更快更可靠的初始匹配,并减少操作员的参与。 该系统还提供改进的仪器,用于更精确的相位和幅度检测,以及功率检测器(6A,6B,6C)的改进布置。 匹配网络(MNA,MNB,MNC)还集成了可匹配网络中可调谐元件可靠控制的电路,还提供了保护可调谐元件免受损坏的设备。

    Apparatus and method for monitoring an optical transmission line
    6.
    发明授权
    Apparatus and method for monitoring an optical transmission line 失效
    用于监测光传输线的装置和方法

    公开(公告)号:US07369763B2

    公开(公告)日:2008-05-06

    申请号:US10281225

    申请日:2002-10-28

    CPC classification number: H04B10/071

    Abstract: An apparatus and a method for monitoring an optical transmission line. An optical pilot signal of a predetermined duration is transmitted along said optical transmission line and a return signal is sent back from a signal returner along the same transmission line corresponding to at least part of said optical pilot signal. The signal returner is positioned at a predetermined point along the optical transmission line. An optical detection apparatus detects said optical pilot signal and also detects said return signal. A monitoring unit receives detection signals from said optical detection apparatus and determins the time relationship between the predetermined duration of the optical pilot signal and the round-trip transit time of the optical pilot signal. A first monitoring signal is generated when the determined time relationship has a predetermined value, and at least one further monitoring signal is generated in other cases.

    Abstract translation: 一种用于监测光传输线路的装置和方法。 沿着所述光传输线传输预定持续时间的光导频信号,并且从对应于所述光导频信号的至少一部分的相同传输线从信号恢复器发回返回信号。 信号恢复器位于沿光传输线的预定点。 光检测装置检测所述光导频信号并检测所述返回信号。 监视单元从所述光检测装置接收检测信号,并确定光导频信号的预定持续时间与光导频信号的往返行进时间之间的时间关系。 当确定的时间关系具有预定值时产生第一监视信号,并且在其他情况下产生至少一个另外的监控信号。

    Addition of power at selected harmonics of plasma processor drive frequency
    7.
    发明授权
    Addition of power at selected harmonics of plasma processor drive frequency 有权
    在等离子处理器驱动频率的选定谐波处增加功率

    公开(公告)号:US06917204B2

    公开(公告)日:2005-07-12

    申请号:US10612824

    申请日:2003-07-03

    Abstract: A method for controlling the non-uniformities of plasma-processed semiconductor wafers by supplying the plasma with two electrical signals: a primary electrical signal that is used to excite the plasma, and a supplemental electrical signal. The supplemental signal may be composed of a plurality of electrical signals, each with a frequency harmonic to that of the primary signal. The phase of the supplemental signal is controlled with respect to the phase of the primary signal. By adjusting the parameters of the supplemental signal with respect to the primary signal, the user can control the parameters of the resultant plasma and, therefore, control the non-uniformities induced in the semiconductor wafer.

    Abstract translation: 通过向等离子体提供两个电信号来控制等离子体处理的半导体晶片的不均匀性的方法:用于激发等离子体的初级电信号和补充电信号。 补充信号可以由多个电信号组成,每个电信号具有与主信号的频率谐波。 补充信号的相位相对于主信号的相位被控制。 通过调整相对于主信号的补充信号的参数,用户可以控制所得到的等离子体的参数,因此控制在半导体晶片中感应的非均匀性。

    Method and device for removing harmonics in semiconductor plasma processing systems
    8.
    发明申请
    Method and device for removing harmonics in semiconductor plasma processing systems 有权
    用于去除半导体等离子体处理系统中的谐波的方法和装置

    公开(公告)号:US20050001555A1

    公开(公告)日:2005-01-06

    申请号:US10859603

    申请日:2004-06-03

    CPC classification number: H01J37/32082 H01J37/32183

    Abstract: A system and method for maintaining a plasma in a plasma region by supplying RF power at a fundamental frequency to the plasma region together with a gas in order to create an RF electromagnetic field which interacts with the gas to create a plasma that contains electromagnetic energy components at frequencies that are harmonics of the fundamental frequency. The components at frequencies that are harmonics of the fundamental frequency are reduced by placing RF energy absorbing resistive loads in energy receiving communication with the plasma, the resistive loads having a frequency dependent attenuation characteristic such that the resistive loads attenuate electrical energy at frequencies higher than the fundamental frequency more strongly than energy at the fundamental frequency.

    Abstract translation: 一种用于通过将基本频率的RF功率与气体一起提供到等离子体区域来维持等离子体的等离子体的系统和方法,以便产生与气体相互作用的RF电磁场,以产生包含电磁能量分量的等离子体 在基频的谐波频率上。 通过将RF能量吸收阻性负载放置在与等离子体的能量接收通信中,减少了基频谐波的分量,电阻负载具有频率相关的衰减特性,使得电阻性负载衰减高于 基频比基频的能量强。

    Method and apparatus for wall film monitoring
    9.
    发明授权
    Method and apparatus for wall film monitoring 失效
    墙膜监测方法和装置

    公开(公告)号:US07732227B2

    公开(公告)日:2010-06-08

    申请号:US11517389

    申请日:2006-09-08

    Abstract: A wall film monitoring system includes first and second microwave mirrors in a plasma processing chamber each having a concave surface. The concave surface of the second mirror is oriented opposite the concave surface of the first mirror. A power source is coupled to the first mirror and configured to produce a microwave signal. A detector is coupled to at least one of the first mirror and the second mirror and configured to measure a vacuum resonance voltage of the microwave signal. A control system is connected to the detector that compares a first measured voltage and a second measured voltage and determines whether the second voltage exceeds a threshold value. A method of monitoring wall film in a plasma chamber includes loading a wafer in the chamber, setting a frequency of a microwave signal output to a resonance frequency, and measuring a first vacuum resonance voltage of the microwave signal. The method includes processing the wafer, measuring a second vacuum resonance voltage of the microwave signal, and determining whether the second measured voltage exceeds a threshold value using the first measured voltage as a reference value.

    Abstract translation: 墙膜监测系统包括等离子体处理室中的具有凹面的第一和第二微波反射镜。 第二反射镜的凹面与第一反射镜的凹面相对。 电源耦合到第一反射镜并且被配置为产生微波信号。 检测器耦合到第一反射镜和第二反射镜中的至少一个并且被配置为测量微波信号的真空谐振电压。 控制系统连接到检测器,该检测器比较第一测量电压和第二测量电压,并确定第二电压是否超过阈值。 一种监测等离子体室中的壁膜的方法包括将晶片装载在室中,将微波信号输出的频率设定为谐振频率,以及测量微波信号的第一真空谐振电压。 该方法包括处理晶片,测量微波信号的第二真空谐振电压,以及使用第一测量电压作为参考值来确定第二测量电压是否超过阈值。

    Non-linear test load and method of calibrating a plasma system
    10.
    发明授权
    Non-linear test load and method of calibrating a plasma system 有权
    非线性测试负载和校准等离子体系统的方法

    公开(公告)号:US07216067B2

    公开(公告)日:2007-05-08

    申请号:US10747087

    申请日:2003-12-30

    CPC classification number: H01J37/32174 H01J37/32082 H01J37/32935

    Abstract: A non-linear test load is provided for calibrating a plasma system. The test load is a substrate for modeling the electrical characteristics of the plasma such that multi frequency testing can be performed in the absence of a plasma reaction. An exemplary substrate includes a first semiconductor junction for providing a non-linear response to the multi-frequency RF source provided from the anode. The first semiconductor junction exhibits a first capacitance for modeling a first plasma sheath of the anode. A plasma component is responsive to the first semiconductor junction and exhibits a resistance for modeling a resistance of the plasma, an inductance for modeling an inductance of the plasma, and a gap capacitance for modeling capacitance of the plasma. A second semiconductor junction is responsive to the plasma component for providing a non-linear response to the multi-frequency RF source provided from the plasma component, the second semiconductor junction exhibits a second capacitance for modeling a second plasma sheath of the cathode.

    Abstract translation: 提供用于校准等离子体系统的非线性测试负载。 测试负载是用于对等离子体的电特性进行建模的衬底,使得可以在不存在等离子体反应的情况下进行多频测试。 示例性衬底包括用于向从阳极提供的多频RF源提供非线性响应的第一半导体结。 第一半导体结显示用于对阳极的第一等离子体护套进行建模的第一电容。 等离子体元件响应于第一半导体结并且显示用于对等离子体的电阻进行建模的电阻,用于对等离子体的电感建模的电感以及用于建模等离子体的电容的间隙电容。 第二半导体结对等离子体部件响应,以向从等离子体部件提供的多频RF源提供非线性响应,第二半导体结表现出用于对阴极的第二等离子体鞘进行建模的第二电容。

Patent Agency Ranking