发明申请
- 专利标题： CHEMICAL TREATMENT TO RETARD DIFFUSION IN A SEMICONDUCTOR OVERLAYER
- 专利标题（中）： 化学处理延缓半导体覆盖层的扩散
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申请号： US10710737申请日： 2004-07-30
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公开(公告)号： US20060024934A1公开(公告)日： 2006-02-02
- 发明人: Kevin Chan , Huajie Chen , Michael Gribelyuk , Judson Holt , Woo-Hyeong Lee , Ryan Mitchell , Renee Mo , Dan Mocuta , Werner Rausch , Paul Ronsheim , Henry Utomo
- 申请人： Kevin Chan , Huajie Chen , Michael Gribelyuk , Judson Holt , Woo-Hyeong Lee , Ryan Mitchell , Renee Mo , Dan Mocuta , Werner Rausch , Paul Ronsheim , Henry Utomo
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/22
- IPC分类号： H01L21/22 ; H01L21/331
摘要：
The present invention provides a method for retarding the diffusion of dopants from a first material layer (typically a semiconductor) into an overlayer or vice versa. In the method of the present invention, diffusion of dopants from the first semiconductor into the overlayer or vice versa is retarded by forming a monolayer comprising carbon and oxygen between the two layers. The monolayer is formed in the present invention utilizing a chemical pretreatment process in which a solution including iodine and an alcohol such as methanol is employed.