公开(公告)号：US20120117696A1

公开(公告)日：2012-05-10

申请号：US12942403

申请日：2010-11-09

申请人： Michael Hatzistergos ,  Christopher M. Molella ,  Paul Ronsheim ,  Matthew F. Stanton

发明人： Michael Hatzistergos ,  Christopher M. Molella ,  Paul Ronsheim ,  Matthew F. Stanton

IPC分类号： G01Q70/00 ,  G01Q70/16

CPC分类号： H01J37/20 ,  B82Y35/00 ,  H01J37/285 ,  H01J2237/201 ,  H01J2237/2855

摘要： An integrated coupon structure for atom probe tomography (APT) analysis includes a base portion and an array of microtip posts protruding from the base portion. Both the base portion and the microtip posts formed from a same metal material, and the microtip posts being shaped at an apex thereof so as to be adapted to receive a sample attached thereto.

摘要翻译： 用于原子探针断层摄影（APT）分析的综合优惠券结构包括基部和从基部突出的微尖柱阵列。 基座部分和微销支柱都由相同的金属材料形成，并且微尖柱在其顶点成形，以适于接收附着于其上的样品。

公开(公告)号：US20060024934A1

公开(公告)日：2006-02-02

申请号：US10710737

申请日：2004-07-30

申请人： Kevin Chan ,  Huajie Chen ,  Michael Gribelyuk ,  Judson Holt ,  Woo-Hyeong Lee ,  Ryan Mitchell ,  Renee Mo ,  Dan Mocuta ,  Werner Rausch ,  Paul Ronsheim ,  Henry Utomo

发明人： Kevin Chan ,  Huajie Chen ,  Michael Gribelyuk ,  Judson Holt ,  Woo-Hyeong Lee ,  Ryan Mitchell ,  Renee Mo ,  Dan Mocuta ,  Werner Rausch ,  Paul Ronsheim ,  Henry Utomo

IPC分类号： H01L21/22 ,  H01L21/331

CPC分类号： H01L21/28044 ,  H01L21/324

摘要： The present invention provides a method for retarding the diffusion of dopants from a first material layer (typically a semiconductor) into an overlayer or vice versa. In the method of the present invention, diffusion of dopants from the first semiconductor into the overlayer or vice versa is retarded by forming a monolayer comprising carbon and oxygen between the two layers. The monolayer is formed in the present invention utilizing a chemical pretreatment process in which a solution including iodine and an alcohol such as methanol is employed.

摘要翻译： 本发明提供了一种用于延迟掺杂剂从第一材料层（通常为半导体）扩散到覆盖层或反之亦然的方法。 在本发明的方法中，通过在两层之间形成包含碳和氧的单层来延缓掺杂剂从第一半导体扩散到覆层中或反之亦然。 使用化学预处理方法在本发明中形成单层，其中使用包括碘和醇如甲醇的溶液。

公开(公告)号：US20080311732A1

公开(公告)日：2008-12-18

申请号：US10596168

申请日：2003-12-04

申请人： Omer Dokumaci ,  Paul Ronsheim

发明人： Omer Dokumaci ,  Paul Ronsheim

IPC分类号： H01L21/425

CPC分类号： H01L21/26506 ,  H01L21/2254 ,  H01L21/2255 ,  H01L21/26513 ,  H01L21/28114 ,  H01L29/1083 ,  H01L29/42376 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/66795 ,  H01L29/785

摘要： A method for forming a semiconductor device includes defining a sacrificial layer (108) over a single crystalline substrate (106). The sacrificial layer (108) is implanted with a dopant species in a manner that prevents the single crystalline substrate (106) from becoming substantially amorphized. The sacrificial layer (108) is annealed so as to drive said dopant species from said sacrificial layer (108) into said single crystalline substrate (106).

摘要翻译： 用于形成半导体器件的方法包括在单晶衬底（106）上限定牺牲层（108）。 牺牲层（108）以防止单晶衬底（106）变得基本非晶化的方式注入掺杂剂物质。 牺牲层（108）被退火以便将所述掺杂剂物质从所述牺牲层（108）驱动到所述单晶衬底（106）中。

公开(公告)号：US5656514A

公开(公告)日：1997-08-12

申请号：US346209

申请日：1994-11-22

申请人： David Ahlgren ,  Jack Chu ,  Martin Revitz ,  Paul Ronsheim ,  Mary Saccamango ,  David Sunderland

发明人： David Ahlgren ,  Jack Chu ,  Martin Revitz ,  Paul Ronsheim ,  Mary Saccamango ,  David Sunderland

IPC分类号： H01L29/165 ,  H01L21/331 ,  H01L29/73 ,  H01L29/737 ,  H01L21/265

CPC分类号： H01L29/66242 ,  Y10S438/936

摘要： A high gain, high frequency transistor is formed having a combination of a moderately doped retrograde emitter and a collector which is formed by self-aligned implantation through an emitter opening window. This combination allows continued base width scaling and ensures high current capability yet limits the electric field at the emitter-base junction, particularly near the base contacts, in order to reduce leakage and capacitance and to enhance breakdown voltage. Cut-off frequencies on the order of 100 GHz can thus be obtained in the performance of a transistor with a 30 nm base width in a SiGe device.

摘要翻译： 形成高增益高频晶体管，其具有中等掺杂逆向发射极和通过发射器开口窗口的自对准注入形成的集电极的组合。 这种组合允许持续的基底宽度缩放并确保高电流能力，但是限制了发射极 - 基极结处，特别是靠近基极触点处的电场，以便减少泄漏和电容并增强击穿电压。 因此，在SiGe器件中，具有30nm基极宽度的晶体管的性能可获得大约100GHz的截止频率。

公开(公告)号：US06749684B1

公开(公告)日：2004-06-15

申请号：US10250181

申请日：2003-06-10

申请人： Huajie Chen ,  Dan Mocuta ,  Richard J. Murphy ,  Paul Ronsheim ,  David Rockwell

发明人： Huajie Chen ,  Dan Mocuta ,  Richard J. Murphy ,  Paul Ronsheim ,  David Rockwell

IPC分类号： C30B2504

CPC分类号： C30B29/06 ,  C30B25/02 ,  C30B29/08 ,  C30B29/52

摘要： A method is disclosed for forming an epitaxial layer on a front side of a substrate formed of a monocrystalline material, using a chemical vapor deposition system. In this method, a plurality of gettering wafers formed of a gettering material are arranged in the CVD system, such that the front side of each substrate is facing one of the gettering wafers. Impurities present in the CVD system during formation of the epitaxial layer are gettered by the gettering wafers. Alternatively, a layer of a gettering material is deposited on a back side of each of the plurality of substrates, and the substrates are arranged such that the front side of each substrate is facing the backside of another of the substrates. In another embodiment, a layer of a gettering material is deposited on an interior surface of the CVD system. Impurities removed from the CVD system during epitaxial formation include oxygen, water vapor and other oxygen-containing contaminants.

摘要翻译： 公开了一种使用化学气相沉积系统在由单晶材料形成的基板的正面上形成外延层的方法。 在该方法中，在CVD系统中配置由吸气材料形成的多个吸气晶片，使得每个基板的前侧面对吸气晶片之一。 在形成外延层期间存在于CVD系统中的杂质被吸杂晶片吸收。 或者，在多个基板的每一个的背面上沉积吸气材料层，并且将基板布置成使得每个基板的前侧面对另一个基板的背面。 在另一个实施例中，吸气材料层沉积在CVD系统的内表面上。 在外延形成期间从CVD系统中除去的杂质包括氧，水蒸气和其它含氧污染物。