发明申请
US20060024938A1 Method for reducing metal silicide excessive encroachment defects in the manufacture of a semiconductor device having silicided source/drain regions
审中-公开
在制造具有硅化物源极/漏极区域的半导体器件的过程中减少金属硅化物过度侵入缺陷的方法
- 专利标题： Method for reducing metal silicide excessive encroachment defects in the manufacture of a semiconductor device having silicided source/drain regions
- 专利标题（中）： 在制造具有硅化物源极/漏极区域的半导体器件的过程中减少金属硅化物过度侵入缺陷的方法
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申请号： US10901697申请日： 2004-07-29
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公开(公告)号： US20060024938A1公开(公告)日： 2006-02-02
- 发明人: Duofeng Yue , Peijun Chen , Jiong-Ping Lu , Thomas Bonifield , Noel Russell
- 申请人： Duofeng Yue , Peijun Chen , Jiong-Ping Lu , Thomas Bonifield , Noel Russell
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments, Incorporated
- 当前专利权人： Texas Instruments, Incorporated
- 当前专利权人地址： US TX Dallas
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/3205 ; H01L21/4763
摘要：
The present invention provides a method for manufacturing a semiconductor device, and a method for manufacturing an integrated circuit including the semiconductor device, and a semiconductor device. The method for manufacturing a semiconductor device, among other steps, includes forming source/drain regions (290) in a substrate (210), the source/drain regions (290) located proximate a gate structure having sidewall spacers (270) and positioned over the substrate (210), and modifying a footprint of the sidewall spacers (270) by forming protective regions (410) proximate a base of the sidewall spacers (270). The method further includes forming metal silicide regions (610) in the source/drain regions (290).