发明申请
US20060027824A1 Semiconductor light source and method of making 有权
半导体光源及其制作方法

Semiconductor light source and method of making
摘要:
A solid state light emitting device having a plurality of semiconductor finger members with side walls perpendicular to a substrate. Multiple quantum wells are formed on the side walls, and are also perpendicular to the substrate. Each multiple quantum well is sandwiched between the side wall of a finger member and a second semiconductor member of a conductivity type opposite to that of the finger member. Ohmic contacts are applied to the finger members and second semiconductor member for receiving a voltage. The device is GaN based such that emitted light will be in the UV region.
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