Semiconductor light source and method of making
    1.
    发明申请
    Semiconductor light source and method of making 有权
    半导体光源及其制作方法

    公开(公告)号:US20060027824A1

    公开(公告)日:2006-02-09

    申请号:US10912153

    申请日:2004-08-06

    IPC分类号: H01L33/00

    摘要: A solid state light emitting device having a plurality of semiconductor finger members with side walls perpendicular to a substrate. Multiple quantum wells are formed on the side walls, and are also perpendicular to the substrate. Each multiple quantum well is sandwiched between the side wall of a finger member and a second semiconductor member of a conductivity type opposite to that of the finger member. Ohmic contacts are applied to the finger members and second semiconductor member for receiving a voltage. The device is GaN based such that emitted light will be in the UV region.

    摘要翻译: 一种固态发光器件,具有多个半导体指状元件,侧壁垂直于衬底。 在侧壁上形成多个量子阱,并且也垂直于衬底。 每个多量子阱被夹在指状构件的侧壁和与手指构件的相反的导电类型的第二半导体构件之间。 欧姆接触被施加到用于接收电压的指状构件和第二半导体构件。 器件是基于GaN的,使得发射的光将在UV区域中。