公开(公告)号：US07683400B1

公开(公告)日：2010-03-23

申请号：US11474398

申请日：2006-06-26

申请人： Narsingh B. Singh ,  Brian P. Wagner ,  David J. Knuteson ,  Michael E. Aumer ,  Andre Berghmans ,  Darren Thomson ,  David Kahler

发明人： Narsingh B. Singh ,  Brian P. Wagner ,  David J. Knuteson ,  Michael E. Aumer ,  Andre Berghmans ,  Darren Thomson ,  David Kahler

IPC分类号： H01L29/08

CPC分类号： H01L29/1608 ,  H01L29/66068 ,  H01L29/66242 ,  H01L29/66431 ,  H01L29/737 ,  H01L29/7781 ,  H01L29/7786

摘要： A Si(1-x)MxC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC Si(1-x)MxC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).

公开(公告)号：US07371282B2

公开(公告)日：2008-05-13

申请号：US11484691

申请日：2006-07-12

申请人： Narsingh Bahadur Singh ,  Brian Wagner ,  Mike Aumer ,  Darren Thomson ,  David Kahler ,  Andre Berghmans ,  David J. Knuteson

发明人： Narsingh Bahadur Singh ,  Brian Wagner ,  Mike Aumer ,  Darren Thomson ,  David Kahler ,  Andre Berghmans ,  David J. Knuteson

IPC分类号： C30B25/12 ,  C30B25/14

CPC分类号： C30B23/02 ,  C30B23/025 ,  C30B25/183 ,  C30B29/36 ,  C30B29/406

摘要： A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)x(SiC)(1-x) without any buffer layer is disclosed. The (AIN)x(SiC)(1-x) alloy film can be formed on a SiC substrate by a vapor deposition process using AlN and SiC powder as starting materials. The (AIN)x(SiC)(1-x) alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.

摘要翻译： 公开了一种用于在没有任何缓冲层的诸如（AIN）x（SiC）1（1-x）之类的合金膜上生长半导体晶体的衬底和方法。 可以通过使用AlN和SiC粉末作为起始材料的气相沉积工艺在SiC衬底上形成（AIN）x（SiC）（1-x））合金膜。 （AIN）x（SiC）（1-x））合金膜为GaN或SiC外延生长提供了更好的晶格匹配，并减少了具有更好晶格的外延生长的GaN中的缺陷 匹配和化学。

公开(公告)号：US20080011223A1

公开(公告)日：2008-01-17

申请号：US11484691

申请日：2006-07-12

申请人： Narsingh Bahadur Singh ,  Brian Wagner ,  Mike Aumer ,  Darren Thomson ,  David Kahler ,  Andre Berghmans ,  David J. Knuteson

发明人： Narsingh Bahadur Singh ,  Brian Wagner ,  Mike Aumer ,  Darren Thomson ,  David Kahler ,  Andre Berghmans ,  David J. Knuteson

IPC分类号： C30B25/00 ,  C30B23/00 ,  C30B28/12

CPC分类号： C30B23/02 ,  C30B23/025 ,  C30B25/183 ,  C30B29/36 ,  C30B29/406

摘要： A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)x(SiC)(1-x) without any buffer layer is disclosed. The (AIN)x(SiC)(1-x) alloy film can be formed on a SiC substrate by a vapor deposition process using AlN and SiC powder as starting materials. The (AIN)x(SiC)(1-x) alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.

公开(公告)号：US20100192840A1

公开(公告)日：2010-08-05

申请号：US12713753

申请日：2010-02-26

申请人： Narsingh B. Singh ,  Brian P. Wagner ,  David J. Knuteson ,  Michael E. Aumer ,  Andre Berghmans ,  Darren Thomson ,  David Kahler

发明人： Narsingh B. Singh ,  Brian P. Wagner ,  David J. Knuteson ,  Michael E. Aumer ,  Andre Berghmans ,  Darren Thomson ,  David Kahler

IPC分类号： C30B23/02

CPC分类号： H01L29/1608 ,  H01L29/66068 ,  H01L29/66242 ,  H01L29/66431 ,  H01L29/737 ,  H01L29/7781 ,  H01L29/7786

摘要： A Si(1-x)MxC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC Si(1-x)MxC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).

摘要翻译： 可以通过CVD，PVD和MOCVD生长用于SiC上异质结构的Si（1-x）MxC材料。 掺杂有诸如Al的金属的SIC改变带隙并因此改变异质结构。 使用SiC和金属源的SiC Si（1-x）MxC异质结的生长允许制造改进的HFMT（高频迁移率晶体管），HBT（异质结双极晶体管）和HEMT（高电子迁移率晶体管）。

公开(公告)号：US20080206121A1

公开(公告)日：2008-08-28

申请号：US12081636

申请日：2008-04-18

申请人： Narsingh Bahadur Singh ,  Brian Wagner ,  Mike Aumer ,  Darren Thomson ,  David Kahler ,  Andre Berghmans ,  David J. Knuteson

发明人： Narsingh Bahadur Singh ,  Brian Wagner ,  Mike Aumer ,  Darren Thomson ,  David Kahler ,  Andre Berghmans ,  David J. Knuteson

IPC分类号： C01B33/00 ,  C23C16/06

CPC分类号： C30B23/02 ,  C30B23/025 ,  C30B25/183 ,  C30B29/36 ,  C30B29/406

摘要： A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)x(SiC)(1-x) without any buffer layer is disclosed. The (AIN)x(SiC)(1-x) alloy film can be formed on a SiC substrate by a vapor deposition process using AIN and SiC powder as starting materials. The (AIN)x(SiC)(1-x) alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.

摘要翻译： 公开了一种用于在没有任何缓冲层的诸如（AIN）x（SiC）1（1-x）之类的合金膜上生长半导体晶体的衬底和方法。 可以通过使用AlN和SiC粉末作为原料的气相沉积法在SiC衬底上形成（AIN）x（SiC）（1-x））合金膜。 （AIN）x（SiC）（1-x））合金膜为GaN或SiC外延生长提供了更好的晶格匹配，并减少了具有更好晶格的外延生长的GaN中的缺陷 匹配和化学。

公开(公告)号：US20190152595A1

公开(公告)日：2019-05-23

申请号：US15816675

申请日：2017-11-17

申请人： Darren Thomson ,  Milad Sakiani ,  Christopher Mitchell

发明人： Christopher Mitchell ,  Darren THOMSON ,  Milad Sakiani

IPC分类号： B64C39/02 ,  A01M29/10 ,  A01M29/16 ,  A01M29/18

摘要： An apparatus for sustained surveillance and/or deterrence of animals, such as birds, from an area, comprising one or more unmanned aerial vehicles (“UAVs”) controlled autonomously or remotely or with minimal human intervention and having a plurality of deterrence capabilities, including but not limited to flight path changes, movement changes, flight speed changes, visual projections and audio projections.

公开(公告)号：US20080179534A1

公开(公告)日：2008-07-31

申请号：US11699335

申请日：2007-01-30

申请人： Narsingh Bahadur Singh ,  Aaron A. Pesetski ,  Andre Berghmans ,  Brian P. Wagner ,  David Kahler ,  David J. Knuteson ,  Darren Thomson

发明人： Narsingh Bahadur Singh ,  Aaron A. Pesetski ,  Andre Berghmans ,  Brian P. Wagner ,  David Kahler ,  David J. Knuteson ,  Darren Thomson

IPC分类号： G01J1/42

CPC分类号： G01J1/429 ,  G01J1/0488

摘要： A nuclear radiation detection system using narrowband UV crystal filters is disclosed. Since the photons produced during the decay of β- and γ-radiation can be detected in the spectral range of about 200-350 nm (the ultraviolet range), UV filter based photo sensors are utilized for detection. The nuclear radiation detection system comprises an optical assembly capable of focusing on a source of radiation, a UV filter assembly having a narrowband UV crystal filter and positioned to receive light transmitted through the optical assembly, and a light detector positioned to receive light transmitted through the UV filter assembly. The narrowband UV crystal filter is fabricated from crystals selected from the group consisting of nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate. The nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate may be doped to achieve even narrower band filter. The radiation detection system can be used to monitor contamination in a nuclear plant or a nuclear waste dump site. It may also be used for surveillance of contamination in case of a nuclear accident.

摘要翻译： 公开了使用窄带UV晶体滤波器的核辐射检测系统。 由于可以在大约200-350nm（紫外范围）的光谱范围内检测在β辐射和γ射线衰变期间产生的光子，所以使用基于UV滤光片的光电传感器进行检测。 核辐射检测系统包括能够聚焦在辐射源上的光学组件，具有窄带UV晶体滤波器并被定位成接收透过光学组件的光的UV滤光器组件，以及定位成接收透过光学组件的光的光检测器 紫外线过滤器总成。 窄带UV晶体滤波器由选自氟硅酸镍，氟硼酸镍和硫酸镍镍的晶体制成。 可以掺杂氟硅酸镍，氟硼酸镍和硫酸镍钾以实现更窄的带过滤器。 辐射检测系统可用于监测核电厂或核废料堆场的污染。 也可用于在发生核事故时监视污染。

公开(公告)号：US20060027824A1

公开(公告)日：2006-02-09

申请号：US10912153

申请日：2004-08-06

申请人： Rowland Clarke ,  Michel Aumer ,  Darren Thomson

发明人： Rowland Clarke ,  Michel Aumer ,  Darren Thomson

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/08 ,  H01L33/10 ,  H01L33/38

摘要： A solid state light emitting device having a plurality of semiconductor finger members with side walls perpendicular to a substrate. Multiple quantum wells are formed on the side walls, and are also perpendicular to the substrate. Each multiple quantum well is sandwiched between the side wall of a finger member and a second semiconductor member of a conductivity type opposite to that of the finger member. Ohmic contacts are applied to the finger members and second semiconductor member for receiving a voltage. The device is GaN based such that emitted light will be in the UV region.

摘要翻译： 一种固态发光器件，具有多个半导体指状元件，侧壁垂直于衬底。 在侧壁上形成多个量子阱，并且也垂直于衬底。 每个多量子阱被夹在指状构件的侧壁和与手指构件的相反的导电类型的第二半导体构件之间。 欧姆接触被施加到用于接收电压的指状构件和第二半导体构件。 器件是基于GaN的，使得发射的光将在UV区域中。

公开(公告)号：US07855108B2

公开(公告)日：2010-12-21

申请号：US12713753

申请日：2010-02-26

申请人： Narsingh B. Singh ,  Brian P. Wagner ,  David J. Knuteson ,  Michael E. Aumer ,  Andre Berghmans ,  Darren Thomson ,  David Kahler

发明人： Narsingh B. Singh ,  Brian P. Wagner ,  David J. Knuteson ,  Michael E. Aumer ,  Andre Berghmans ,  Darren Thomson ,  David Kahler

IPC分类号： H01L21/338

CPC分类号： H01L29/1608 ,  H01L29/66068 ,  H01L29/66242 ,  H01L29/66431 ,  H01L29/737 ,  H01L29/7781 ,  H01L29/7786

摘要： A Si(1-x)MxC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC Si(1-x)MxC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).

摘要翻译： 可以通过CVD，PVD和MOCVD生长用于SiC上异质结构的Si（1-x）MxC材料。 掺杂有诸如Al的金属的SIC改变带隙并因此改变异质结构。 使用SiC和金属源的SiC Si（1-x）MxC异质结的生长允许制造改进的HFMT（高频迁移率晶体管），HBT（异质结双极晶体管）和HEMT（高电子迁移率晶体管）。

公开(公告)号：US07525099B2

公开(公告)日：2009-04-28

申请号：US11699335

申请日：2007-01-30

申请人： Narsingh Bahadur Singh ,  Aaron A. Pesetski ,  Andre Berghmans ,  Brian P. Wagner ,  David Kahler ,  David J. Knuteson ,  Darren Thomson

发明人： Narsingh Bahadur Singh ,  Aaron A. Pesetski ,  Andre Berghmans ,  Brian P. Wagner ,  David Kahler ,  David J. Knuteson ,  Darren Thomson

IPC分类号： G01J1/42

CPC分类号： G01J1/429 ,  G01J1/0488

摘要： A nuclear radiation detection system using narrowband UV crystal filters is disclosed. Since the photons produced during the decay of β- and γ-radiation can be detected in the spectral range of about 200-350 nm (the ultraviolet range), UV filter based photo sensors are utilized for detection. The nuclear radiation detection system comprises an optical assembly capable of focusing on a source of radiation, a UV filter assembly having a narrowband UV crystal filter and positioned to receive light transmitted through the optical assembly, and a light detector positioned to receive light transmitted through the UV filter assembly. The narrowband UV crystal filter is fabricated from crystals selected from the group consisting of nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate. The nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate may be doped to achieve even narrower band filter. The radiation detection system can be used to monitor contamination in a nuclear plant or a nuclear waste dump site. It may also be used for surveillance of contamination in case of a nuclear accident.

摘要翻译： 公开了使用窄带UV晶体滤波器的核辐射检测系统。 由于可以在大约200-350nm（紫外范围）的光谱范围内检测在β辐射和γ射线衰变期间产生的光子，所以使用基于UV滤光片的光电传感器进行检测。 核辐射检测系统包括能够聚焦在辐射源上的光学组件，具有窄带UV晶体滤波器并被定位成接收透过光学组件的光的UV滤光器组件，以及定位成接收透过光学组件的光的光检测器 紫外线过滤器总成。 窄带UV晶体滤波器由选自氟硅酸镍，氟硼酸镍和硫酸镍镍的晶体制成。 可以掺杂氟硅酸镍，氟硼酸镍和硫酸镍钾以实现更窄的带过滤器。 辐射检测系统可用于监测核电厂或核废料堆场的污染。 也可用于在发生核事故时监视污染。