发明申请
US20060028900A1 MEMORY DEVICE EMPLOYING OPEN BIT LINE ARCHITECTURE FOR PROVIDING IDENTICAL DATA TOPOLOGY ON REPAIRED MEMORY CELL BLOCK AND METHOD THEREOF
失效
使用开放位线架构的记忆装置，用于在修复的记忆体块上提供标识数据拓扑及其方法
- 专利标题： MEMORY DEVICE EMPLOYING OPEN BIT LINE ARCHITECTURE FOR PROVIDING IDENTICAL DATA TOPOLOGY ON REPAIRED MEMORY CELL BLOCK AND METHOD THEREOF
- 专利标题（中）： 使用开放位线架构的记忆装置，用于在修复的记忆体块上提供标识数据拓扑及其方法
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申请号： US11197227申请日： 2005-08-04
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公开(公告)号： US20060028900A1公开(公告)日： 2006-02-09
- 发明人: Dong-Hak Shin , Ho-Sung Song , Byung-Sik Moon
- 申请人： Dong-Hak Shin , Ho-Sung Song , Byung-Sik Moon
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., LTD.
- 当前专利权人： Samsung Electronics Co., LTD.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR2004-62279 20040809
- 主分类号： G11C8/00
- IPC分类号： G11C8/00 ; G11C7/06 ; G11C29/00
摘要：
A memory device has at least one pair of memory cell blocks, a spare row decoder, a data exchange control signal generator and a data exchange unit. When a defective memory cell in a first memory cell block is repaired with a spare memory cell in a second memory cell block that neighbors (or is adjacent) the first memory cell block, the data topology of the memory cell of the first memory cell may be matched to the memory cell of the second memory cell block.
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