Integrating n-type and p-type metal gate transistors

Invention Application

US20060030104A1 Integrating n-type and p-type metal gate transistors 有权

Title translation: 集成n型和p型金属栅晶体管

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Patent Title: Integrating n-type and p-type metal gate transistors
Patent Title (中): 集成n型和p型金属栅晶体管
Application No.: US11248737

Application Date: 2005-10-11
Publication No.: US20060030104A1

Publication Date: 2006-02-09
Inventor: Mark Doczy , Justin Brask , Steven Keating , Chris Barns , Brian Doyle , Michael McSwiney , Jack Kavalieros , John Barnak
Applicant: Mark Doczy , Justin Brask , Steven Keating , Chris Barns , Brian Doyle , Michael McSwiney , Jack Kavalieros , John Barnak
Main IPC: H01L21/336
IPC: H01L21/336

Integrating n-type and p-type metal gate transistors

Abstract:

At least a p-type and n-type semiconductor device deposited upon a semiconductor wafer containing metal or metal alloy gates. More particularly, a complementary metal-oxide-semiconductor (CMOS) device is formed on a semiconductor wafer having n-type and p-type metal gates.

Abstract(Chinese):

至少p型和n型半导体器件沉积在包含金属或金属合金栅极的半导体晶片上。更具体地，在具有n型和p型金属栅极的半导体晶片上形成互补金属氧化物半导体（CMOS）器件。

Public/Granted literature

US07316949B2 Integrating n-type and p-type metal gate transistors Public/Granted day:2008-01-08

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/334	....制造单极型器件的台阶式工艺
H01L21/335	.....场效应晶体管
H01L21/336	......带有绝缘栅的