发明申请
US20060037531A1 Furnace purification and metal fluoride crystals grown in a purified furnace 失效
在纯化炉中生长的炉子净化和金属氟化物晶体

Furnace purification and metal fluoride crystals grown in a purified furnace
摘要:
The invention is directed to a method for growing metal fluoride crystals suitable for use in below 200 nm optical lithography systems, the method comprising including at least the step of heating a crystal growth furnace to a temperature in the range of 1400-2000° C. to purify the furnace by removal of sulfur and chlorine prior to using the furnace for growing metal fluoride single crystals.
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