公开(公告)号：US20060037531A1

公开(公告)日：2006-02-23

申请号：US10971315

申请日：2004-10-22

申请人： Michele Fredholm ,  Jeffrey Kohli ,  Nicholas LeBlond ,  Alexandre Mayolet ,  Viktoria Pshenitsyna ,  Pawan Saxena ,  Paul Schermerhorn

发明人： Michele Fredholm ,  Jeffrey Kohli ,  Nicholas LeBlond ,  Alexandre Mayolet ,  Viktoria Pshenitsyna ,  Pawan Saxena ,  Paul Schermerhorn

IPC分类号： C30B11/00 ,  C30B17/00 ,  C30B9/00 ,  C30B21/02 ,  C30B28/06

CPC分类号： C30B11/00 ,  C30B29/12

摘要： The invention is directed to a method for growing metal fluoride crystals suitable for use in below 200 nm optical lithography systems, the method comprising including at least the step of heating a crystal growth furnace to a temperature in the range of 1400-2000° C. to purify the furnace by removal of sulfur and chlorine prior to using the furnace for growing metal fluoride single crystals.

摘要翻译： 本发明涉及一种用于生长适用于200nm以下的光刻系统的金属氟化物晶体的方法，该方法至少包括将晶体生长炉加热到1400-2000℃的温度的步骤。 在使用炉子生长金属氟化物单晶之前，通过除去硫和氯来净化炉。

公开(公告)号：US20050139146A1

公开(公告)日：2005-06-30

申请号：US10982678

申请日：2004-11-04

申请人： Thomas Glasson ,  Nicholas LeBlond ,  Alexandre Mayolet

发明人： Thomas Glasson ,  Nicholas LeBlond ,  Alexandre Mayolet

IPC分类号： G02B1/02 ,  C30B11/00 ,  C30B29/12 ,  C30B1/00 ,  G03F9/00

CPC分类号： C30B11/00 ,  C30B29/12

摘要： The invention is directed to a method of preparing metal fluoride crystals that are suitable for making optical elements that can be used in below 200 nm lithographic equipment and processes. In accordance with the invention, metal fluoride particles, substantially all of which have a size of 1 mm or greater, are treated with an oxygen scavenger material just prior to being melted and used to grow a metal fluoride single crystal. In one embodiment of the invention a metal fluoride raw material is treated with an oxygen scavenger to remove oxygen containing impurities, liquefied and cooled to form a premelt material. The premelt material is then broken into particles having a range of sizes and separated by sieving or other separation methods known in the art into at least a group of particles substantially all of which have a size of 1 mm or larger and a group of particles having a size of less than 1 mm. The 1 mm and larger material is used to grow metal fluoride single crystals having improved transmission properties in the rage 120-220 nm. The less than 1 mm material can be recycled. Particles of 1 mm or greater prepared by other methods known in the art can also be used in practicing the invention.

摘要翻译： 本发明涉及一种制备金属氟化物晶体的方法，所述金属氟化物晶体适于制备可用于低于200nm平版印刷设备和方法的光学元件。 根据本发明，金属氟化物颗粒，其基本上全部具有1mm或更大的尺寸，在熔融之前用除氧剂材料处理并用于生长金属氟化物单晶。 在本发明的一个实施方案中，用除氧剂处理金属氟化物原料以除去含氧杂质，液化并冷却以形成预熔材料。 然后将预熔材料破碎成具有一定范围尺寸的颗粒，并通过本领域已知的筛分或其它分离方法分离成至少一组基本上具有1mm或更大尺寸的颗粒，并且一组颗粒具有 尺寸小于1毫米。 使用1mm以上的材料生长具有改善的透射性能的金属氟化物单晶，在120-220nm的范围内。 少于1毫米的材料可以回收利用。 通过本领域已知的其它方法制备的1mm以上的颗粒也可用于实施本发明。

公开(公告)号：US20070117354A1

公开(公告)日：2007-05-24

申请号：US11517908

申请日：2006-09-08

申请人： Kishor Gadkaree ,  Alexandre Mayolet

发明人： Kishor Gadkaree ,  Alexandre Mayolet

IPC分类号： H01L21/20

CPC分类号： H01L21/76254

摘要： Methods and apparatus provide for contacting respective first surfaces of a plurality of donor semiconductor wafers with a glass substrate; bonding the first surfaces of the plurality of donor semiconductor wafers to the glass substrate using electrolysis; separating the plurality of donor semiconductor wafers from the glass substrate leaving respective exfoliation layers bonded to the glass substrate; and depositing a further semiconductor layer on exposed surfaces of the exfoliation layers to augment a thickness of the exfoliation layers.

摘要翻译： 方法和装置提供使多个施主半导体晶片的相应第一表面与玻璃基板接触; 使用电解将多个施主半导体晶片的第一表面与玻璃基板接合; 将所述多个施主半导体晶片与所述玻璃基板分离，留下结合到所述玻璃基板的各剥离层; 以及在剥离层的暴露表面上沉积另外的半导体层以增加剥离层的厚度。