发明申请
US20060042385A1 BMEMS-type high-sensitivity inertial sensor and manufacturing process thereof
有权
MEMS型高灵敏度惯性传感器及其制造工艺
- 专利标题： BMEMS-type high-sensitivity inertial sensor and manufacturing process thereof
- 专利标题（中）： MEMS型高灵敏度惯性传感器及其制造工艺
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申请号： US11189544申请日： 2005-07-25
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公开(公告)号： US20060042385A1公开(公告)日： 2006-03-02
- 发明人: Simone Sassolini , Marco Del Sarto , Lorenzo Baldo , Mauro Marchi
- 申请人： Simone Sassolini , Marco Del Sarto , Lorenzo Baldo , Mauro Marchi
- 申请人地址： IT Agrate Brianza
- 专利权人： STMicroelectronics S.r.l.
- 当前专利权人： STMicroelectronics S.r.l.
- 当前专利权人地址： IT Agrate Brianza
- 优先权： EP04425573.5 20040729
- 主分类号： G01P15/08
- IPC分类号： G01P15/08 ; H01L21/308
摘要：
The semiconductor inertial sensor is formed by a rotor element and a stator element electrostatically coupled together. The rotor element is formed by a suspended mass and by a plurality of mobile electrodes extending from the suspended mass. The stator element is formed by a plurality of fixed electrodes facing respective mobile electrodes. The suspended mass is supported by elastic suspension elements. The suspended mass has a first, larger, thickness, and the elastic suspension elements have a second thickness, smaller than the first thickness.