发明申请
- 专利标题: Molybdenum sputtering targets
- 专利标题(中): 钼溅射靶
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申请号: US10931203申请日: 2004-08-31
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公开(公告)号: US20060042728A1公开(公告)日: 2006-03-02
- 发明人: Brad Lemon , Joseph Hirt , Timothy Welling , James Daily , David Meendering , Gary Rozak , Jerome O'Grady , Peter Jepson , Prabhat Kumar , Steven Miller , Rong-Chein Wu , David Schwartz
- 申请人: Brad Lemon , Joseph Hirt , Timothy Welling , James Daily , David Meendering , Gary Rozak , Jerome O'Grady , Peter Jepson , Prabhat Kumar , Steven Miller , Rong-Chein Wu , David Schwartz
- 主分类号: C22F1/18
- IPC分类号: C22F1/18
摘要:
Molybdenum, sputtering targets and sintering characterized as having no or minimal texture banding or through thickness gradient. The molybdenum sputtering targets having a fine, uniform grain size as well as uniform texture, are high purity and can be micro-alloyed to improved performance. The sputtering targets can be round discs, square, rectangular or tubular and can be sputtered to form thin films on substrates. By using a segment-forming method, the size of the sputtering target can be up to 6 m×5.5 m. The thin films can be used in electronic components such as Thin Film Transistor—Liquid Crystal Displays, Plasma Display Panels, Organic Light Emitting Diodes, Inorganic Light Emitting Diode Displays, Field Emission Displays, solar cells, sensors, semiconductor devices, and gate device for CMOS (complementary metal oxide semiconductor) with tunable work functions.
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