公开(公告)号：US20060091552A1

公开(公告)日：2006-05-04

申请号：US10978940

申请日：2004-11-01

Applicant: Henry Breit ,  Rong-Chein Wu ,  Prabhat Kumar

Inventor： Henry Breit ,  Rong-Chein Wu ,  Prabhat Kumar

IPC: H01L23/48

CPC classification number: H01L23/3736 ,  H01L23/3733 ,  H01L23/3735 ,  H01L2924/0002 ,  Y10T428/12361 ,  Y10T428/12486 ,  Y10T428/12528 ,  Y10T428/12535 ,  Y10T428/12806 ,  Y10T428/12861 ,  Y10T428/12903 ,  Y10T428/31678 ,  H01L2924/00

Abstract: A substrate for semiconductor and integrated circuit components including: a core plate containing a Group VIB metal from the periodic table of the elements and/or an anisotropic material, having a first major surface and a second major surface and a plurality of openings extending, at least partially, from the first major surface to the second major surface; and a Group IB metal from the periodic table of the elements or other high thermally conductive material filling at least a portion of the space encompassed by at least some of the openings; and optionally, a layer containing a Group IB metal from the periodic table or other high thermally conductive material disposed over at least a portion of the first major surface and at least a portion of the second major surface. The substrate can be used in electronic devices, which can also include one or more semiconductor components.

Abstract translation: 一种用于半导体和集成电路部件的衬底，包括：含有来自元件的周期表的VIB族金属和/或各向异性材料的芯板，具有第一主表面和第二主表面，以及多个开口， 最少部分地从第一主表面到第二主表面; 和来自元件周期表的IB族金属或其它高导​​热材料填充由至少一些开口包围的空间的至少一部分; 以及任选地，包含来自周期表的IB族金属或设置在第一主表面的至少一部分和第二主表面的至少一部分上的其它高导热材料的层。 该基板可用于电子设备中，其也可包括一个或多个半导体部件。

公开(公告)号：US20050232850A1

公开(公告)日：2005-10-20

申请号：US11142066

申请日：2005-06-01

Applicant: Patrick Brown ,  Rong-Chein Wu ,  Raymond Pedicone ,  Michael Madara

Inventor： Patrick Brown ,  Rong-Chein Wu ,  Raymond Pedicone ,  Michael Madara

IPC: B65D47/20 ,  C01G33/00 ,  C01G35/00 ,  F02B75/12 ,  F02M51/06 ,  F02M51/08 ,  F02M61/16 ,  F02M61/18 ,  H01G9/052

CPC classification number: F02M51/0671 ,  C01G33/00 ,  C01G35/00 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2004/10 ,  C01P2004/32 ,  C01P2004/50 ,  C01P2004/51 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/10 ,  C01P2006/11 ,  C01P2006/12 ,  C01P2006/40 ,  C01P2006/80 ,  F02B2075/125 ,  F02M61/168 ,  F02M61/1853 ,  H01G9/0525

Abstract: A process for producing valve metal oxides, such as tantalum pentoxide or niobium pentoxide with a narrow particle size distribution within a desired particle size range, is provided. According to the process of the present invention, the valve metal fraction from digestion of valve metal material containing ore is processed under controlled temperature, pH, and residence time conditions to produce the valve metal pentoxide and pentoxide hydrates. Also, disclosed are new tantalum pentoxide and niobium pentoxide products and new tantalum pentoxide precursors and niobium pentoxide precursors.

Abstract translation: 提供了一种用于生产阀门金属氧化物的方法，例如五氧化二钽或五氧化二铌，其粒度分布窄于期望的粒度范围内。 根据本发明的方法，从控制温度，pH和停留时间条件下处理含有矿石的阀金属材料消解的阀门金属部分，以产生五水合五氧化二磷和五水氧化物。 此外，还公开了新的五氧化二钽和五氧化二铌产物和新的五氧化二钽前体和五氧化二铌前体。

公开(公告)号：US20060042728A1

公开(公告)日：2006-03-02

申请号：US10931203

申请日：2004-08-31

Applicant: Brad Lemon ,  Joseph Hirt ,  Timothy Welling ,  James Daily ,  David Meendering ,  Gary Rozak ,  Jerome O'Grady ,  Peter Jepson ,  Prabhat Kumar ,  Steven Miller ,  Rong-Chein Wu ,  David Schwartz

Inventor： Brad Lemon ,  Joseph Hirt ,  Timothy Welling ,  James Daily ,  David Meendering ,  Gary Rozak ,  Jerome O'Grady ,  Peter Jepson ,  Prabhat Kumar ,  Steven Miller ,  Rong-Chein Wu ,  David Schwartz

IPC: C22F1/18

CPC classification number: C23C14/3414 ,  B22F1/0003 ,  B22F3/16 ,  B22F3/162 ,  B22F3/24 ,  B22F5/006 ,  B22F2003/248 ,  B22F2301/20 ,  B22F2998/00 ,  B22F2998/10 ,  C21D8/0221 ,  C21D8/0247 ,  C22C1/045 ,  C22C27/04 ,  C22F1/18 ,  C23C14/14 ,  C23C14/3478 ,  C23C14/3485 ,  C23C14/35 ,  C23C14/46 ,  B22F3/172 ,  B22F3/20 ,  B22F3/04 ,  B22F3/10

Abstract: Molybdenum, sputtering targets and sintering characterized as having no or minimal texture banding or through thickness gradient. The molybdenum sputtering targets having a fine, uniform grain size as well as uniform texture, are high purity and can be micro-alloyed to improved performance. The sputtering targets can be round discs, square, rectangular or tubular and can be sputtered to form thin films on substrates. By using a segment-forming method, the size of the sputtering target can be up to 6 m×5.5 m. The thin films can be used in electronic components such as Thin Film Transistor—Liquid Crystal Displays, Plasma Display Panels, Organic Light Emitting Diodes, Inorganic Light Emitting Diode Displays, Field Emission Displays, solar cells, sensors, semiconductor devices, and gate device for CMOS (complementary metal oxide semiconductor) with tunable work functions.

Abstract translation: 钼，溅射靶和烧结表征为没有或最小纹理条纹或通过厚度梯度。 具有精细，均匀的晶粒尺寸以及均匀织构的钼溅射靶是高纯度的，并且可以微合金化以改善性能。 溅射靶可以是圆盘，正方形，矩形或管状，并且可以溅射以在基底上形成薄膜。 通过使用段形成方法，溅射靶的尺寸可以达到6m×5.5μm。 薄膜可以用于薄膜晶体管 - 液晶显示器，等离子体显示面板，有机发光二极管，无机发光二极管显示器，场发射显示器，太阳能电池，传感器，半导体器件和门装置等电子部件中 CMOS（互补金属氧化物半导体）具有可调功能。

公开(公告)号：US20070089984A1

公开(公告)日：2007-04-26

申请号：US11255018

申请日：2005-10-20

Applicant: Mark Gaydos ,  Prabhat Kumar ,  Steve Miller ,  Norman Mills ,  Gary Rozak ,  John Shields ,  Rong-Chein Wu

Inventor： Mark Gaydos ,  Prabhat Kumar ,  Steve Miller ,  Norman Mills ,  Gary Rozak ,  John Shields ,  Rong-Chein Wu

IPC: C23C14/00 ,  C25B11/00

CPC classification number: C23C14/3414 ,  B22F3/15 ,  B22F2998/00 ,  B22F2998/10 ,  C22C1/045 ,  B22F5/006 ,  B22F1/0003 ,  B22F3/02 ,  B22F3/1208 ,  B22F3/04

Abstract: Molybdenum titanium sputter targets are provided. In one aspect, the targets are substantially free of the β(Ti, Mo) alloy phase. In another aspect, the targets are substantially comprised of single phase β(Ti, Mo) alloy. In both aspects, particulate emission during sputtering is reduced. Methods of preparing the targets, methods of bonding targets together to produce large area sputter targets, and films produced by the targets, are also provided.

Abstract translation: 提供钼钛溅射靶。 在一个方面，靶基本上不含β（Ti，Mo）合金相。 另一方面，靶基本上由单相β（Ti，Mo）合金组成。 在这两个方面，溅射中的颗粒发射减少。 还提供了制备目标的方法，将靶标结合在一起以产生大面积溅射靶的方法，以及由靶产生的膜。

公开(公告)号：US20070071985A1

公开(公告)日：2007-03-29

申请号：US11238366

申请日：2005-09-29

Applicant: Prabhat Kumar ,  Gerhard Woetting ,  Rong-Chein Wu

Inventor： Prabhat Kumar ,  Gerhard Woetting ,  Rong-Chein Wu

IPC: C04B35/01

CPC classification number: C23C14/28 ,  C04B35/01 ,  C04B35/111 ,  C04B35/453 ,  C04B35/457 ,  C04B35/495 ,  C04B35/6261 ,  C04B35/645 ,  C04B2235/3256 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/77 ,  C23C14/0021 ,  C23C14/086

Abstract: The present invention is directed to a composition consisting essentially of: a) from about 0.1 to about 60 mole % of MoO2, b) from 0 to about 99.9 mole % of In2O3, c) from 0 to about 99.9 mole % of SnO2, d) from 0 to about 99.9 mole % of ZnO, e) from 0 to about 99.9 mole % of Al2O3, f) from 0 to about 99.9 mole % of Ga2O3, wherein the sum of components b) through f) is from about 40 to about 99.9 mole %, and wherein the mole %s are based on the total product and wherein the sum of components a) through e) is 100. The invention is also directed to the sintered product of such composition, a sputtering target made from the sintered product and a transparent electroconductive film made from the composition.

Abstract translation: 本发明涉及一种组合物，其基本上由以下组成：a）约0.1至约60摩尔％的MoO 2 2，b）0至约99.9摩尔％的In 2， c）0至约99.9摩尔％的SnO 2，d）0至约99.9摩尔％的ZnO，e）0至约3摩尔％ 99.9摩尔％的Al 2 O 3，f）0至约99.9摩尔％的Ga 2 O 3 3 / 其中组分b）至f）的总和为约40至约99.9摩尔％，并且其中摩尔％s基于总产物，其中组分a）至e）的总和为100.本发明 还涉及这种组合物的烧结产品，由烧结产品制成的溅射靶和由该组合物制成的透明导电膜。