- 专利标题: Stacked photoelectric converter
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申请号: US10530283申请日: 2004-07-15
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公开(公告)号: US20060043517A1公开(公告)日: 2006-03-02
- 发明人: Toshiaki Sasaki , Yohei Koi , Kenji Yamamoto , Masashi Yoshimi , Mitsuru Ichikawa
- 申请人: Toshiaki Sasaki , Yohei Koi , Kenji Yamamoto , Masashi Yoshimi , Mitsuru Ichikawa
- 优先权: JP2003-279493 20030724; JP2003-367536 20031028; JP2003-367535 20031028; JP2004-091897 20040326
- 国际申请: PCT/JP04/10115 WO 20040715
- 主分类号: H01L31/105
- IPC分类号: H01L31/105
摘要:
In a stacked-layer type photoelectric conversion device, a plurality of photoelectric conversion units are stacked on a substrate, each of which includes a one conductivity-type layer, a photoelectric conversion layer of substantially intrinsic semiconductor and an opposite conductivity-type layer in this order from a light-incident side. At least one of the opposite conductivity-type layer in a front photoelectric conversion unit arranged relatively closer to the light-incident side and the one conductivity-type layer in a back photoelectric conversion unit arranged adjacent to the front photoelectric conversion unit includes a silicon composite layer at least in a part thereof. The silicon composite layer has a thickness of more than 20 nm and less than 130 nm and an oxygen concentration of more than 25 atomic % and less than 60 atomic %, and includes silicon-rich phase parts in an amorphous alloy phase of silicon and oxygen.
公开/授权文献
- US07550665B2 Stacked photoelectric converter 公开/授权日:2009-06-23