发明申请
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US11173740申请日： 2005-06-30
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公开(公告)号： US20060043618A1公开(公告)日： 2006-03-02
- 发明人: Kisho Ashida , Akira Muto , Ichio Shimizu , Toshiyuki Hata , Kenya Kawano , Naotaka Tanaka , Nae Hisano
- 申请人： Kisho Ashida , Akira Muto , Ichio Shimizu , Toshiyuki Hata , Kenya Kawano , Naotaka Tanaka , Nae Hisano
- 申请人地址： JP Tokyo
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2004-250474 20040830
- 主分类号： H01L31/109
- IPC分类号： H01L31/109
摘要：
A semiconductor device has a semiconductor chip including first and second surfaces opposed to each other in a thickness direction of the semiconductor chip, wherein the first and second surfaces include first and second electrode surfaces respectively, and first and second electrically conductive members covering the first and second electrode surfaces respectively as seen in the thickness direction to be electrically connected to the first and second electrode surfaces respectively.
公开/授权文献
- US07432594B2 Semiconductor chip, electrically connections therefor 公开/授权日：2008-10-07
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