发明申请
- 专利标题： Forming abrupt source drain metal gate transistors
- 专利标题（中）： 形成突发源极漏极金属栅极晶体管
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申请号： US10925566申请日： 2004-08-25
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公开(公告)号： US20060046399A1公开(公告)日： 2006-03-02
- 发明人: Nick Lindert , Suman Datta , Jack Kavalieros , Mark Doczy , Matthew Metz , Justin Brask , Robert Chau , Mark Bohr , Anand Murthy
- 申请人： Nick Lindert , Suman Datta , Jack Kavalieros , Mark Doczy , Matthew Metz , Justin Brask , Robert Chau , Mark Bohr , Anand Murthy
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A gate structure may be utilized as a mask to form source and drain regions. Then the gate structure may be removed to form a gap and spacers may be formed in the gap to define a trench. In the process of forming a trench into the substrate, a portion of the source drain region is removed. Then the substrate is filled back up with an epitaxial material and a new gate structure is formed thereover. As a result, more abrupt source drain junctions may be achieved.