发明申请
- 专利标题： Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials
- 专利标题（中）： 在含硅介电材料的形成中引入含羟基的前体的间隙填充沉积
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申请号： US11213612申请日： 2005-08-26
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公开(公告)号： US20060046427A1公开(公告)日： 2006-03-02
- 发明人: Nitin Ingle , Shan Wong , Xinyun Xia , Vikash Banthia , Won Bang , Yen-Kun Wang
- 申请人： Nitin Ingle , Shan Wong , Xinyun Xia , Vikash Banthia , Won Bang , Yen-Kun Wang
- 申请人地址： US CA Santa Clara
- 专利权人： APPLIED MATERIALS, INC., A Delaware corporation
- 当前专利权人： APPLIED MATERIALS, INC., A Delaware corporation
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate. The method includes flowing a silicon-containing precursor into a process chamber housing the substrate, flowing an oxidizing gas into the chamber, and providing a hydroxyl-containing precursor in the process chamber. The method also includes reacting the silicon-containing precursor, oxidizing gas and hydroxyl-containing precursor to form the dielectric material in the trench. The ratio of the silicon-containing precursor to the oxidizing gas flowed into the chamber is increased over time to alter a rate of deposition of the dielectric material.
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