公开(公告)号：US08204923B1

公开(公告)日：2012-06-19

申请号：US11590938

申请日：2006-10-31

申请人： Stephen N. Lam ,  Pui Shan Wong

发明人： Stephen N. Lam ,  Pui Shan Wong

IPC分类号： G06F7/00

CPC分类号： G06F7/483

摘要： The disclosed technology provides a system and a method for scaling parameters in a real-time computation system. A real-time computation system can receive a plurality of input data. The real-time computation system can determine a scaling factor based on an input data, and the scaling factor can be used in connection with a subsequent input data. When a new input data arrives, the real-time computation system can, in parallel, determine a new scaling factor based on the new input data and compute output values based on the existing scaling factor and the new input data. In one aspect of the invention, the real-time computation system can be a statistical signal processing system, which can compute output values, at least in part, using look-up tables.

摘要翻译： 所公开的技术提供了一种用于在实时计算系统中缩放参数的系统和方法。 实时计算系统可以接收多个输入数据。 实时计算系统可以基于输入数据确定缩放因子，并且缩放因子可以与随后的输入数据结合使用。 当新的输入数据到达时，实时计算系统可以并行地基于新的输入数据确定新的缩放因子，并且基于现有的缩放因子和新的输入数据来计算输出值。 在本发明的一个方面，实时计算系统可以是统计信号处理系统，其可以至少部分地使用查找表来计算输出值。

公开(公告)号：USD647139S1

公开(公告)日：2011-10-18

申请号：US29388483

申请日：2011-03-29

申请人： Chin Cheng Quah ,  Tong Shan Wong

设计人： Chin Cheng Quah ,  Tong Shan Wong

公开(公告)号：US20060175951A1

公开(公告)日：2006-08-10

申请号：US11052892

申请日：2005-02-09

申请人： Luk-Shan Wong

发明人： Luk-Shan Wong

IPC分类号： H01J1/14 ,  H01J9/12

CPC分类号： H01J61/0672 ,  H01J9/022 ,  H01J61/0675

摘要： An electrode of a cold cathode fluorescent and manufacturing method thereof has an integral structure that makes it easy to increase the discharge area of the discharge portion and raise production output. The manufacturing method of the electrode has the followed steps: mixing metal powders and binders to form a mixture; shaping the mixture in an electrode die to form an electrode mold base; heating the electrode mold base until a sintering temperature to form an electrode; and compacting the electrode for increasing its intensity.

摘要翻译： 冷阴极荧光体的电极及其制造方法具有能够容易地增加放电部的放电面积并提高生产输出的一体结构。 电极的制造方法具有以下步骤：将金属粉末和粘合剂混合以形成混合物; 在电极模中形成混合物以形成电极模具底座; 加热电极模具底座直到烧结温度以形成电极; 并压制电极以增加其强度。

公开(公告)号：US20080276318A1

公开(公告)日：2008-11-06

申请号：US11799693

申请日：2007-05-02

申请人： Brian Leung ,  Keith Lau ,  Wah Cheong Hui ,  Ching Shan Wong

发明人： Brian Leung ,  Keith Lau ,  Wah Cheong Hui ,  Ching Shan Wong

IPC分类号： G06F11/30

CPC分类号： H04L51/12

摘要： A spam detection system employs a “Delayed-Verification on Purported Responsible Address” (DVPRA) module which verifies the validity of the return address of a received e-mail message in mail server in a time delay interval specifiable by the user. An implementation of the module as a Spam Mail Filter in a stand-alone spam detection system. An implementation of the module as a supplementary to the existing anti-spam systems.

摘要翻译： 垃圾邮件检测系统采用“声称为负责地址的延迟验证”（DVPRA）模块，其以用户可指定的时间延迟间隔验证邮件服务器中接收的电子邮件的返回地址的有效性。 在独立的垃圾邮件检测系统中将模块实现为垃圾邮件过滤器。 该模块的实现是对现有反垃圾邮件系统的补充。

公开(公告)号：US20080115726A1

公开(公告)日：2008-05-22

申请号：US11941793

申请日：2007-11-16

申请人： Nitin K. Ingle ,  Shan Wong ,  Xinyun Xia ,  Vikash Banthia ,  Won B. Bang ,  Yen-Kun V. Wang

发明人： Nitin K. Ingle ,  Shan Wong ,  Xinyun Xia ,  Vikash Banthia ,  Won B. Bang ,  Yen-Kun V. Wang

IPC分类号： B05C11/00

CPC分类号： H01L21/76837 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/76224

摘要： A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate. The method includes flowing a silicon-containing precursor into a process chamber housing the substrate, flowing an oxidizing gas into the chamber, and providing a hydroxyl-containing precursor in the process chamber. The method also includes reacting the silicon-containing precursor, oxidizing gas and hydroxyl-containing precursor to form the dielectric material in the trench. The ratio of the silicon-containing precursor to the oxidizing gas flowed into the chamber is increased over time to alter a rate of deposition of the dielectric material.

摘要翻译： 一种用于在形成在衬底上的沟槽中形成电介质材料的化学气相沉积方法。 该方法包括将含硅前体流入容纳基底的处理室，将氧化气体流入室中，并在处理室中提供含羟基的前体。 该方法还包括使含硅前体，氧化气体和含羟基的前体反应以在沟槽中形成电介质材料。 流入室中的含硅前体与氧化气体的比例随时间增加以改变电介质材料的沉积速率。

公开(公告)号：US07335609B2

公开(公告)日：2008-02-26

申请号：US11213612

申请日：2005-08-26

申请人： Nitin K. Ingle ,  Shan Wong ,  Xinyun Xia ,  Vikash Banthia ,  Won B. Bang ,  Yen-Kun V. Wang

发明人： Nitin K. Ingle ,  Shan Wong ,  Xinyun Xia ,  Vikash Banthia ,  Won B. Bang ,  Yen-Kun V. Wang

IPC分类号： H01L21/31 ,  H01L21/76

CPC分类号： H01L21/76837 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/76224

摘要： A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate. The method includes flowing a silicon-containing precursor into a process chamber housing the substrate, flowing an oxidizing gas into the chamber, and providing a hydroxyl-containing precursor in the process chamber. The method also includes reacting the silicon-containing precursor, oxidizing gas and hydroxyl-containing precursor to form the dielectric material in the trench. The ratio of the silicon-containing precursor to the oxidizing gas flowed into the chamber is increased over time to alter a rate of deposition of the dielectric material.

摘要翻译： 一种用于在形成在衬底上的沟槽中形成电介质材料的化学气相沉积方法。 该方法包括将含硅前体流入容纳基底的处理室，将氧化气体流入室中，并在处理室中提供含羟基的前体。 该方法还包括使含硅前体，氧化气体和含羟基的前体反应以在沟槽中形成电介质材料。 流入室中的含硅前体与氧化气体的比例随时间增加以改变电介质材料的沉积速率。

公开(公告)号：US20070072699A1

公开(公告)日：2007-03-29

申请号：US11234101

申请日：2005-09-26

申请人： Luk-Shan Wong

发明人： Luk-Shan Wong

IPC分类号： A63B53/00

CPC分类号： A63B53/04 ,  A63B53/047 ,  A63B60/00 ,  A63B2053/0416 ,  A63B2209/00 ,  B22F3/105 ,  B22F2998/00 ,  Y10T29/49796 ,  B22F3/14 ,  B22F3/02

摘要： A clubface of golf club head and a method for fabricating the same can fabricate the clubface in mass production and will not consume much more valuable metal. The method has the following steps: firstly, a conductive top mould and a conductive bottom mould are provided. Then, titanium powder is placed on the conductive bottom mould and press down the top mould. Following, the conductive top mould and the conductive bottom mould are electrified. The conductive top mould is provided with consistent pressure to contact with the conductive bottom mould, and consistently electrifying the conductive top mould and the conductive bottom mould for a predetermined period. After that, removing electricity, and removing the conductive top mould and taking out the clubface of the golf club head.

摘要翻译： 高尔夫球杆头的球杆及其制造方法可以在大规模生产中制造球杆面，并且不会消耗更多有价值的金属。 该方法具有以下步骤：首先提供导电顶模和导电底模。 然后，将钛粉放置在导电底模上并压下顶模。 接下来，导电顶模和导电底模通电。 导电顶模提供一致的压力以与导电底模接触，并且一定地使导电顶模和导电底模持续预定的时间。 之后，去除电力，并且去除导电顶模并取出高尔夫球杆头的杆面。

公开(公告)号：US20060046427A1

公开(公告)日：2006-03-02

申请号：US11213612

申请日：2005-08-26

申请人： Nitin Ingle ,  Shan Wong ,  Xinyun Xia ,  Vikash Banthia ,  Won Bang ,  Yen-Kun Wang

发明人： Nitin Ingle ,  Shan Wong ,  Xinyun Xia ,  Vikash Banthia ,  Won Bang ,  Yen-Kun Wang

IPC分类号： H01L21/76

CPC分类号： H01L21/76837 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/76224

摘要： A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate. The method includes flowing a silicon-containing precursor into a process chamber housing the substrate, flowing an oxidizing gas into the chamber, and providing a hydroxyl-containing precursor in the process chamber. The method also includes reacting the silicon-containing precursor, oxidizing gas and hydroxyl-containing precursor to form the dielectric material in the trench. The ratio of the silicon-containing precursor to the oxidizing gas flowed into the chamber is increased over time to alter a rate of deposition of the dielectric material.

摘要翻译： 一种用于在形成在衬底上的沟槽中形成电介质材料的化学气相沉积方法。 该方法包括将含硅前体流入容纳基底的处理室，将氧化气体流入室中，并在处理室中提供含羟基的前体。 该方法还包括使含硅前体，氧化气体和含羟基的前体反应以在沟槽中形成电介质材料。 流入室中的含硅前体与氧化气体的比例随时间增加以改变电介质材料的沉积速率。

公开(公告)号：US20050142895A1

公开(公告)日：2005-06-30

申请号：US11018381

申请日：2004-12-20

申请人： Nitin Ingle ,  Shan Wong ,  Xinyun Xia ,  Vikash Banthia ,  Won Bang ,  Yen-Kun Wang ,  Zheng Yuan

发明人： Nitin Ingle ,  Shan Wong ,  Xinyun Xia ,  Vikash Banthia ,  Won Bang ,  Yen-Kun Wang ,  Zheng Yuan

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  C23C16/00 ,  H01L21/31 ,  H01L21/469

CPC分类号： C23C16/45512 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/52

摘要： A method to form a silicon oxide layer, where the method includes the step of providing a continuous flow of a silicon-containing precursor to a chamber housing a substrate, where the silicon-containing precursor is selected from TMOS, TEOS, OMTS, OMCTS, and TOMCATS. The method may also include the steps of providing a flow of an oxidizing precursor to the chamber, and causing a reaction between the silicon-containing precursor and the oxidizing precursor to form a silicon oxide layer. The method may further include varying over time a ratio of the silicon-containing precursor:oxidizing precursor flowed into the chamber to alter a rate of deposition of the silicon oxide on the substrate.

摘要翻译： 一种形成氧化硅层的方法，其中该方法包括提供含硅前体连续流入容纳衬底的室的步骤，其中含硅前体选自TMOS，TEOS，OMTS，OMCTS， 和TOMCATS。 该方法还可以包括以下步骤：向室提供氧化前体流，并使含硅前体和氧化前体之间的反应形成氧化硅层。 该方法可以进一步包括随着时间的推移改变硅含量的前体：氧化前体流入室中以改变氧化硅在衬底上的沉积速率。

公开(公告)号：US09027624B2

公开(公告)日：2015-05-12

申请号：US13876852

申请日：2010-11-30

申请人： Tong Shan Wong ,  De Yi Quah

发明人： Chin Cheng Quah ,  Tong Shan Wong

IPC分类号： B32B37/22 ,  B43L19/00 ,  B65H37/00

CPC分类号： B43L19/0068 ,  B65H37/00 ,  B65H37/007 ,  Y10T156/1348 ,  Y10T156/1795 ,  Y10T156/18

摘要： The present invention relates to a tape guiding mechanism (10) of a tape device (100). The tape device (100) comprises a strip of tape (20) having supply tape (22) and take up tape (24); a spool portion (130); a supply spool (40) disposed at the spool portion (130) for winding the supply tape (22); a take up spool (50) disposed at the spool portion (130) for winding the take up tape (24); an application tip (12); and a spool mechanism (70) for allowing the supply and the take up spools (40 & 50) to rotate such that the tape travels from the supply spool (40), around the applicator tip (120), and to the take up spool (50).

摘要翻译： 带装置（100）的带引导机构（10）技术领域本发明涉及带装置（100）的带引导机构（10）。 带装置（100）包括具有供带（22）和卷取带（24）的条带条（20）; 阀芯部分（130）; 设置在卷轴部分（130）处用于卷绕供应带（22）的供应卷轴（40）; 设置在卷轴部分（130）处以卷绕卷取带（24）的卷取卷轴（50）; 应用尖端（12）; 以及用于允许供应和卷取卷轴（40和50）旋转的卷轴机构（70），使得带从供给卷轴（40）在涂抹器末端（120）周围行进并且到卷取卷轴 （50）。