Invention Application
- Patent Title: Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials
- Patent Title (中): 在含硅介电材料的形成中引入含羟基的前体的间隙填充沉积
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Application No.: US11213612Application Date: 2005-08-26
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Publication No.: US20060046427A1Publication Date: 2006-03-02
- Inventor: Nitin Ingle , Shan Wong , Xinyun Xia , Vikash Banthia , Won Bang , Yen-Kun Wang
- Applicant: Nitin Ingle , Shan Wong , Xinyun Xia , Vikash Banthia , Won Bang , Yen-Kun Wang
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC., A Delaware corporation
- Current Assignee: APPLIED MATERIALS, INC., A Delaware corporation
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate. The method includes flowing a silicon-containing precursor into a process chamber housing the substrate, flowing an oxidizing gas into the chamber, and providing a hydroxyl-containing precursor in the process chamber. The method also includes reacting the silicon-containing precursor, oxidizing gas and hydroxyl-containing precursor to form the dielectric material in the trench. The ratio of the silicon-containing precursor to the oxidizing gas flowed into the chamber is increased over time to alter a rate of deposition of the dielectric material.
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