- 专利标题： Method for making a semiconductor device having a high-k gate dielectric
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申请号： US10935784申请日： 2004-09-07
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公开(公告)号： US20060051880A1公开(公告)日： 2006-03-09
- 发明人: Mark Doczy , Gilbert Dewey , Suman Datta , Sangwoo Pae , Justin Brask , Jack Kavalieros , Matthew Metz , Adrian Sherrill , Markus Kuhn , Robert Chau
- 申请人： Mark Doczy , Gilbert Dewey , Suman Datta , Sangwoo Pae , Justin Brask , Jack Kavalieros , Matthew Metz , Adrian Sherrill , Markus Kuhn , Robert Chau
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/336 ; H01L21/20
摘要：
A method for making a semiconductor device is described. That method comprises forming an oxide layer on a substrate, and forming a high-k dielectric layer on the oxide layer. The oxide layer and the high-k dielectric layer are then annealed at a sufficient temperature for a sufficient time to generate a gate dielectric with a graded dielectric constant.
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