Invention Application
- Patent Title: Bipolar transistor with high dynamic performances
- Patent Title (中): 具有高动态性能的双极晶体管
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Application No.: US10942165Application Date: 2004-09-16
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Publication No.: US20060054998A1Publication Date: 2006-03-16
- Inventor: Alain Chantre , Bertrand Martinet , Michel Marty , Pascal Chevalier
- Applicant: Alain Chantre , Bertrand Martinet , Michel Marty , Pascal Chevalier
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics S.A.
- Current Assignee: STMicroelectronics S.A.
- Current Assignee Address: FR Montrouge
- Main IPC: H01L27/082
- IPC: H01L27/082
Abstract:
A novel bipolar transistor with very high dynamic performances, usable in an integrated circuit. This bipolar transistor comprises a single-crystal silicon emitter region with a thickness smaller than 50 nm. The base of the bipolar transistor is made of an SiGe alloy.
Public/Granted literature
- US07122879B2 Bipolar transistor with high dynamic performances Public/Granted day:2006-10-17
Information query
IPC分类:
