发明申请
- 专利标题： Semiconductor devices including high-k dielectric materials and methods of forming the same
- 专利标题（中）： 包括高k电介质材料的半导体器件及其形成方法
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申请号： US11227541申请日： 2005-09-15
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公开(公告)号： US20060057794A1公开(公告)日： 2006-03-16
- 发明人: Sun-Pil Youn , Chang-Won Lee , Woong-Hee Sohn , Gil-Heyun Choi , Jong-Ryeol Yoo , Dong-Chan Lim , Jae-Hwa Park , Byung-Hak Lee , Hee-Sook Park
- 申请人： Sun-Pil Youn , Chang-Won Lee , Woong-Hee Sohn , Gil-Heyun Choi , Jong-Ryeol Yoo , Dong-Chan Lim , Jae-Hwa Park , Byung-Hak Lee , Hee-Sook Park
- 优先权： KR10-2004-0074074 20040916
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234
摘要：
A semiconductor device includes a first conductive layer on a semiconductor substrate, a dielectric layer including a high-k dielectric material on the first conductive layer, a second conductive layer including polysilicon doped with P-type impurities on the dielectric layer, and a third conductive layer including a metal on the second conductive layer. In some devices, a first gate structure is formed in a main cell region and includes a tunnel oxide layer, a floating gate, a first high-k dielectric layer, and a control gate. The control gate includes a layer of polysilicon doped with P-type impurities and a metal layer. A second gate structure is formed outside the main cell region and includes a tunnel oxide layer, a conductive layer, and a metal layer. A third gate structure is formed in a peripheral cell region and includes a tunnel oxide, a conductive layer, and a high-k dielectric layer having a width narrower than the conductive layer. Method embodiments are also disclosed.
公开/授权文献
- US07696552B2 Semiconductor devices including high-k dielectric materials 公开/授权日：2010-04-13