Invention Application
- Patent Title: Reducing oxidation under a high K gate dielectric
- Patent Title (中): 在高K栅电介质下还原氧化
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Application No.: US10939227Application Date: 2004-09-10
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Publication No.: US20060057808A1Publication Date: 2006-03-16
- Inventor: Robert Turkot , Justin Brask , Jack Kavalieros , Mark Doczy , Matthew Metz , Uday Shah , Suman Datta , Robert Chau
- Applicant: Robert Turkot , Justin Brask , Jack Kavalieros , Mark Doczy , Matthew Metz , Uday Shah , Suman Datta , Robert Chau
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/8234 ; H01L21/3205
Abstract:
A metal layer is formed on a dielectric layer, which is formed on a substrate. After forming a masking layer on the metal layer, the exposed sides of the dielectric layer are covered with a polymer diffusion barrier.
Public/Granted literature
- US07387927B2 Reducing oxidation under a high K gate dielectric Public/Granted day:2008-06-17
Information query
IPC分类:
