公开(公告)号：US20060057808A1

公开(公告)日：2006-03-16

申请号：US10939227

申请日：2004-09-10

Applicant: Robert Turkot ,  Justin Brask ,  Jack Kavalieros ,  Mark Doczy ,  Matthew Metz ,  Uday Shah ,  Suman Datta ,  Robert Chau

Inventor： Robert Turkot ,  Justin Brask ,  Jack Kavalieros ,  Mark Doczy ,  Matthew Metz ,  Uday Shah ,  Suman Datta ,  Robert Chau

IPC: H01L21/336 ,  H01L21/8234 ,  H01L21/3205

CPC classification number: H01L21/28079 ,  H01L21/28088 ,  H01L21/28194 ,  H01L21/82345 ,  H01L21/823842 ,  H01L29/495 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/517

Abstract: A metal layer is formed on a dielectric layer, which is formed on a substrate. After forming a masking layer on the metal layer, the exposed sides of the dielectric layer are covered with a polymer diffusion barrier.

Abstract translation: 在形成在基板上的电介质层上形成金属层。 在金属层上形成掩模层之后，介电层的暴露侧面被聚合物扩散阻挡层覆盖。

公开(公告)号：US20050048791A1

公开(公告)日：2005-03-03

申请号：US10652546

申请日：2003-08-28

Applicant: Justin Brask ,  Uday Shah ,  Mark Doczy ,  Jack Kavalieros ,  Robert Chau ,  Robert Turkot ,  Matthew Metz

Inventor： Justin Brask ,  Uday Shah ,  Mark Doczy ,  Jack Kavalieros ,  Robert Chau ,  Robert Turkot ,  Matthew Metz

IPC: H01L21/336 ,  H01L21/311 ,  H01L21/302 ,  H01L21/461

CPC classification number: H01L21/31111

Abstract: A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer on a substrate, and modifying a first portion of the high-k gate dielectric layer to ensure that it may be removed selectively to a second portion of the high-k gate dielectric layer.

Abstract translation: 描述制造半导体器件的方法。 该方法包括在衬底上形成高k栅极电介质层，以及修改高k栅极电介质层的第一部分，以确保其可被选择性地去除到高k栅极电介质层的第二部分。

公开(公告)号：US20060102204A1

公开(公告)日：2006-05-18

申请号：US10987594

申请日：2004-11-12

Applicant: Gunilla Jacobson ,  Bentley Palmer ,  Shan Clark ,  Vijayakumar Ramachandrarao ,  Subramanyam Iyer ,  Robert Turkot

Inventor： Gunilla Jacobson ,  Bentley Palmer ,  Shan Clark ,  Vijayakumar Ramachandrarao ,  Subramanyam Iyer ,  Robert Turkot

IPC: C23G1/00 ,  B08B3/00

CPC classification number: B08B7/0021 ,  C23G5/00 ,  G03F7/427 ,  H01L21/02063 ,  H01L21/02101 ,  H01L21/31133

Abstract: A method for cleaning a substrate containing a micro-feature having a residue thereon. The method includes treating the substrate with a supercritical carbon dioxide cleaning solution containing a peroxide to remove the residue from the micro-feature, where the supercritical carbon dioxide cleaning solution is maintained at a temperature between about 35° C. and about 80° C. According an embodiment of the invention, the supercritical carbon dioxide cleaning solution can further contain ozone. According to another embodiment of the invention, the substrate can be pre-treated with an ozone processing environment.

Abstract translation: 一种清洗含有残留物的微特征的基材的方法。 该方法包括用含有过氧化物的超临界二氧化碳清洗溶液处理底物以从微特征中除去残余物，其中超临界二氧化碳清洗溶液保持在约35℃至约80℃的温度。 根据本发明的一个实施方案，超临界二氧化碳清洗溶液可以进一步含有臭氧。 根据本发明的另一个实施例，可以用臭氧处理环境预处理衬底。

公开(公告)号：US20050101134A1

公开(公告)日：2005-05-12

申请号：US10704498

申请日：2003-11-06

Applicant: Justin Brask ,  Mark Doczy ,  Jack Kavalieros ,  Uday Shah ,  Matthew Metz ,  Robert Chau ,  Robert Turkot

Inventor： Justin Brask ,  Mark Doczy ,  Jack Kavalieros ,  Uday Shah ,  Matthew Metz ,  Robert Chau ,  Robert Turkot

IPC: C23F1/02 ,  H01L21/3213 ,  H01L21/8238 ,  H01L21/302 ,  H01L21/461

CPC classification number: C23F1/02 ,  H01L21/32134 ,  H01L21/823842

Abstract: A method for etching a metal layer is described. That method comprises forming a metal layer on a substrate, then exposing part of the metal layer to a wet etch chemistry that comprises an active ingredient with a diameter that exceeds the thickness of the metal layer.

Abstract translation: 描述了蚀刻金属层的方法。 该方法包括在基底上形成金属层，然后将金属层的一部分暴露于包含直径超过金属层厚度的活性成分的湿式蚀刻化学物质。

公开(公告)号：US20060180874A1

公开(公告)日：2006-08-17

申请号：US11403015

申请日：2006-04-12

Applicant: Justin Brask ,  Robert Turkot

Inventor： Justin Brask ,  Robert Turkot

IPC: H01L29/76

CPC classification number: H01L29/66545 ,  H01L21/32134 ,  H01L29/78

Abstract: A metal silicide may be selectively etched by converting the metal silicide to a metal silicate. This may be done using oxidation. The metal silicate may then be removed, for example, by wet etching. A non-destructive low pH wet etchant may be utilized, in some embodiments, with high selectivity by dissolution.

公开(公告)号：US20050266619A1

公开(公告)日：2005-12-01

申请号：US10855635

申请日：2004-05-26

Applicant: Justin Brask ,  Jack Kavalieros ,  Mark Doczy ,  Matthew Metz ,  Uday Shah ,  Chris Barns ,  Suman Datta ,  Robert Turkot ,  Robert Chau

Inventor： Justin Brask ,  Jack Kavalieros ,  Mark Doczy ,  Matthew Metz ,  Uday Shah ,  Chris Barns ,  Suman Datta ,  Robert Turkot ,  Robert Chau

IPC: H01L21/00 ,  H01L21/326 ,  H01L21/336 ,  H01L21/479 ,  H01L21/768 ,  H01L21/8238 ,  H01L21/84

CPC classification number: H01L29/66545 ,  H01L21/76895 ,  H01L21/823842 ,  H01L21/823857 ,  H01L21/823871

Abstract: A method for making a semiconductor device is described. That method comprises forming on a substrate a first gate dielectric layer that has a first substantially vertical component, then forming a first metal layer on the first gate dielectric layer. After forming on the substrate a second gate dielectric layer that has a second substantially vertical component, a second metal layer is formed on the second gate dielectric layer. In this method, a conductor is formed that contacts both the first metal layer and the second metal layer.

Abstract translation: 描述制造半导体器件的方法。 该方法包括在衬底上形成具有第一基本垂直分量的第一栅极电介质层，然后在第一栅极电介质层上形成第一金属层。 在衬底上形成具有第二基本垂直分量的第二栅介质层之后，在第二栅介质层上形成第二金属层。 在该方法中，形成与第一金属层和第二金属层接触的导体。

公开(公告)号：US20050101113A1

公开(公告)日：2005-05-12

申请号：US10704497

申请日：2003-11-06

Applicant: Justin Brask ,  Mark Doczy ,  Jack Kavalieros ,  Uday Shah ,  Matthew Metz ,  Robert Chau ,  Robert Turkot

Inventor： Justin Brask ,  Mark Doczy ,  Jack Kavalieros ,  Uday Shah ,  Matthew Metz ,  Robert Chau ,  Robert Turkot

IPC: H01L21/28 ,  H01L21/3213 ,  H01L21/8238 ,  H01L29/49 ,  H01L21/3205

CPC classification number: H01L29/4958 ,  H01L21/28079 ,  H01L21/32134 ,  H01L21/823842

Abstract: A method for making a semiconductor device is described. That method comprises forming a dielectric layer on a substrate, and forming a first metal layer on a first part of the dielectric layer, leaving a second part of the dielectric layer exposed. After a second metal layer is formed on both the first metal layer and the second part of the dielectric layer, a masking layer is formed on the second metal layer.

Abstract translation: 描述制造半导体器件的方法。 该方法包括在衬底上形成电介质层，并且在介电层的第一部分上形成第一金属层，留下介电层的第二部分露出。 在第一金属层和电介质层的第二部分上形成第二金属层之后，在第二金属层上形成掩模层。

公开(公告)号：US20050054201A1

公开(公告)日：2005-03-10

申请号：US10943634

申请日：2004-09-17

Applicant: Vijayakumar Ramachandrarao ,  Robert Turkot

Inventor： Vijayakumar Ramachandrarao ,  Robert Turkot

IPC: H01L21/768 ,  H01L21/302 ,  H01L21/461

CPC classification number: H01L21/76808

Abstract: Suitable particles may be deposited within an extremely small high-aspect ratio via by flowing the particles in a suspension using supercritical carbon dioxide. The particles may be made up of diblock copolymers or silesquioxane-based materials or oligomers of phobic homopolymers or pre-formed silica-based particles stabilized using diblock copolymers and may include chemical initiators to permit in situ polymerization within the via.

Abstract translation: 通过使用超临界二氧化碳使悬浮液中的颗粒流动，可以将非常小的高纵横比通过沉积合适的颗粒。 颗粒可以由二嵌段共聚物或倍半硅氧烷基材料或使用二嵌段共聚物稳定的疏水均聚物或预形成的二氧化硅基颗粒的低聚物组成，并且可以包括化学引发剂以允许通孔内原位聚合。

公开(公告)号：US20050012160A1

公开(公告)日：2005-01-20

申请号：US10622955

申请日：2003-07-18

Applicant: Justin Brask ,  Robert Turkot

Inventor： Justin Brask ,  Robert Turkot

IPC: H01L21/3213 ,  H01L21/336 ,  H01L29/78

CPC classification number: H01L29/66545 ,  H01L21/32134 ,  H01L29/78

Abstract: A metal silicide may be selectively etched by converting the metal silicide to a metal silicate. This may be done using oxidation. The metal silicate may then be removed, for example, by wet etching. A non-destructive low pH wet etchant may be utilized, in some embodiments, with high selectivity by dissolution.

Abstract translation: 可以通过将金属硅化物转化为金属硅酸盐来选择性地蚀刻金属硅化物。 这可以使用氧化来完成。 然后可以例如通过湿蚀刻除去金属硅酸盐。 在一些实施方案中，可以使用非破坏性低pH湿蚀刻剂，通过溶解具有高选择性。