发明申请
- 专利标题： High output group III nitride light emitting diodes
- 专利标题（中）： 高输出III族氮化物发光二极管
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申请号： US11112429申请日： 2005-04-22
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公开(公告)号： US20060060872A1公开(公告)日： 2006-03-23
- 发明人: John Edmond , Michael Bergmann , David Emerson , Kevin Haberern
- 申请人： John Edmond , Michael Bergmann , David Emerson , Kevin Haberern
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
A light emitting diode is disclosed that includes a silicon carbide substrate and a light emitting structure formed from the Group III nitride material system on the substrate. The diode has an area greater than 100,000 square microns and has a radiant flux at 20 milliamps current of at least 29 milliwatts at its dominant wavelength between 390 and 540 nanometers.
公开/授权文献
- US07737459B2 High output group III nitride light emitting diodes 公开/授权日：2010-06-15
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