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    Methods of forming light emitting devices having current reducing structures
    4.
    发明授权
    Methods of forming light emitting devices having current reducing structures 有权
    形成具有电流还原结构的发光器件的方法

    公开(公告)号：US08436368B2

    公开(公告)日：2013-05-07

    申请号：US13406251

    申请日：2012-02-27

    申请人： David Todd Emerson ,  Kevin Haberern ,  Michael John Bergmann ,  David B. Slater, Jr. ,  Matthew Donofrio ,  John Edmond

    发明人： David Todd Emerson ,  Kevin Haberern ,  Michael John Bergmann ,  David B. Slater, Jr. ,  Matthew Donofrio ,  John Edmond

    IPC分类号： H01L27/15

    CPC分类号： H01L33/145 ,  H01L24/05 ,  H01L33/14 ,  H01L33/38 ,  H01L2224/49107 ,  H01L2933/0016

    摘要： A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region.

    摘要翻译： 发光器件包括p型半导体层，n型半导体层和n型半导体层和p型半导体层之间的有源区。 p型半导体层或与p型半导体层相对的n型半导体层上的非透明特性，例如引线接合焊盘，在p型半导体层中具有导电性降低的区域 或n型半导体层并且与非透明特征对准。 导电性降低区域可以从与n型半导体层相对的p型半导体层的表面朝向有源区域和/或从与p型半导体层相对的n型半导体层的表面朝向有源区域 地区。

    DAMPENER
    5.
    发明申请
    DAMPENER 有权

    公开(公告)号：US20130077325A1

    公开(公告)日：2013-03-28

    申请号：US13638569

    申请日：2011-03-29

    申请人： Martin John Edmond Dieleman

    发明人： Martin John Edmond Dieleman

    IPC分类号： F21V15/04 ,  F21V19/00 ,  F16F7/00

    CPC分类号： F21V15/04 ,  F16F7/00 ,  F21V19/00 ,  H01R33/9753 ,  Y10T29/49826

    摘要： A dampener configured to augment the mounting of a lamp in a socket by resisting displacement of the lamp relative to the socket. The dampener is made from a material able to absorb vibrations and to reduce or prevent vibrations in the lamp. The dampener is made in one piece or more pieces, wherein each piece is interposable in whole or in part between the socket and the lamp base to insulate the lamp in whole or part against the vibration translated through the socket or surrounding air.

    摘要翻译： 阻尼器，其构造成通过抵抗灯相对于插座的位移来增加灯在灯座中的安装。 阻尼器由能够吸收振动并减少或防止灯泡振动的材料制成。 阻尼器制成一件或多件，其中每件件全部或部分地插入在插座和灯座之间，以将灯全部或部分地抵抗通过插座或周围空气翻转的振动。

    Light Emitting Diode with Improved Light Extraction
    7.
    发明申请
    Light Emitting Diode with Improved Light Extraction 有权
    具有改进的光提取的发光二极管

    公开(公告)号：US20100140636A1

    公开(公告)日：2010-06-10

    申请号：US12329713

    申请日：2008-12-08

    申请人： Matthew Donofrio ,  Hua-Shuang Kong ,  David Slater, JR. ,  John Edmond

    发明人： Matthew Donofrio ,  Hua-Shuang Kong ,  David Slater, JR. ,  John Edmond

    IPC分类号： H01L27/00 ,  F21V7/00

    CPC分类号： H01L33/22 ,  H01L33/20 ,  H01L33/46

    摘要： A light emitting diode is disclosed that includes an active region and a plurality of exterior surfaces. A light enhancement feature is present on at least portions of one of the exterior surfaces of the diode, with the light enhancement feature being selected from the group consisting of shaping and texturing. A light enhancement feature is present on at least portions of each of the other exterior surfaces of the diode, with these light enhancement features being selected from the group consisting of shaping, texturing, and reflectors.

    摘要翻译： 公开了一种包括有源区和多个外表面的发光二极管。 光增强特征存在于二极管的一个外表面的至少一部分上，光增强特征选自由成形和纹理组成的组。 在二极管的每个其它外表面的至少一部分上存在光增强特征，这些光增强特征选自由成形，纹理和反射器组成的组。

    EMISSION TUNING METHODS AND DEVICES FABRICATED UTILIZING METHODS
    8.
    发明申请
    EMISSION TUNING METHODS AND DEVICES FABRICATED UTILIZING METHODS 有权
    排放调谐方法和装置制造用途方法

    公开(公告)号：US20090261358A1

    公开(公告)日：2009-10-22

    申请号：US12414457

    申请日：2009-03-30

    申请人： ASHAY CHITNIS ,  JOHN EDMOND ,  JEFFREY CARL BRITT ,  BERND P. KELLER ,  DAVID TODD EMERSON ,  MICHAEL JOHN BERGMANN ,  JASPER S. CABALU

    发明人： ASHAY CHITNIS ,  JOHN EDMOND ,  JEFFREY CARL BRITT ,  BERND P. KELLER ,  DAVID TODD EMERSON ,  MICHAEL JOHN BERGMANN ,  JASPER S. CABALU

    IPC分类号： H01L33/00 ,  H01L21/66 ,  B23B47/00

    CPC分类号： H01L33/508 ,  H01L33/0095 ,  H01L2224/13 ,  H01L2933/0041 ,  Y10T408/47

    摘要： A method for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs, typically on a wafer, and coating the LEDs with a conversion material so that at least some light from the LEDs passes through the conversion material and is converted. The light emission from the LED chips comprises light from the conversion material, typically in combination with LED light. The emission characteristics of at least some of the LED chips is measured and at least some of the conversion material over the LEDs is removed to alter the emission characteristics of the LED chips. The invention is particularly applicable to fabricating LED chips on a wafer where the LED chips have light emission characteristics that are within a range of target emission characteristics. This target range can fall within an emission region on a CIE curve to reduce the need for binning of the LEDs from the wafer. The emission characteristics of the LED chips in the wafer can be tuned to the desired range by micro-machining the conversion material over the LEDs.

    摘要翻译： 一种用于制造发光二极管（LED）芯片的方法，包括通常在晶片上提供多个LED，并用转换材料涂覆LED，使得来自LED的至少一些光通过转换材料并被转换。 来自LED芯片的光发射包括来自转换材料的光，通常与LED光结合。 测量至少一些LED芯片的发射特性，并且除去LED上的至少一些转换材料以改变LED芯片的发射特性。 本发明特别适用于在晶片上制造LED芯片，其中LED芯片具有在目标发射特性范围内的发光特性。 该目标范围可以落在CIE曲线上的发射区域内，以减少对来自晶片的LED进行合并的需要。 晶片上的LED芯片的发射特性可以通过在LED上微转换材料来调节到期望的范围。