发明申请
- 专利标题： Method of selective etching using etch stop layer
- 专利标题（中）： 使用蚀刻停止层的选择性蚀刻方法
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申请号： US11090773申请日： 2005-03-25
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公开(公告)号： US20060066932A1公开(公告)日： 2006-03-30
- 发明人: Clarence Chui , Manish Kothari , Brian Gally , Ming-Hau Tung
- 申请人： Clarence Chui , Manish Kothari , Brian Gally , Ming-Hau Tung
- 主分类号： G02F1/03
- IPC分类号： G02F1/03
摘要：
The fabrication of a MEMS device such as an interferometric modulator is improved by employing an etch stop layer between a sacrificial layer and a mirror layer. The etch stop may reduce undesirable over-etching of the sacrificial layer and the mirror layer. The etch stop layer may also serve as a barrier layer, buffer layer, and/or template layer.
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