发明申请
- 专利标题: Methods of fabricating semiconductor devices
- 专利标题(中): 制造半导体器件的方法
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申请号: US11216662申请日: 2005-08-31
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公开(公告)号: US20060068535A1公开(公告)日: 2006-03-30
- 发明人: Sun-Pil Youn , Chang-Won Lee , Woong-Hee Sohn , Gil-Heyun Choi , Jong-Ryeol Yoo , Dong-Chan Lim , Byung-Hak Lee , Hee-Sook Park
- 申请人: Sun-Pil Youn , Chang-Won Lee , Woong-Hee Sohn , Gil-Heyun Choi , Jong-Ryeol Yoo , Dong-Chan Lim , Byung-Hak Lee , Hee-Sook Park
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR10-2004-0070636 20040904; KR10-2004-0109187 20041221
- 主分类号: H01L21/8234
- IPC分类号: H01L21/8234
摘要:
Methods of forming semiconductor devices are provided. A preliminary gate structure is formed on a semiconductor substrate. The preliminary gate structure includes a gate insulation layer pattern, a polysilicon layer pattern and a conductive layer pattern. A first oxidation process is performed on the preliminary gate structure using an oxygen radical. The first oxidation process is carried out at a first temperature. A second oxidation process is carried out on the oxidized preliminary gate structure to provide a gate structure on the substrate, the second oxidation process being carried out at a second temperature, the second temperature being higher than the first temperature.
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