发明申请
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US11206212申请日： 2005-08-18
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公开(公告)号： US20060076613A1公开(公告)日： 2006-04-13
- 发明人: Takasumi Ohyanagi , Atsuo Watanabe , Toshio Sakakibara , Tsuyoshi Yamamoto , Hiroki Nakamura , Rajesh Malhan
- 申请人： Takasumi Ohyanagi , Atsuo Watanabe , Toshio Sakakibara , Tsuyoshi Yamamoto , Hiroki Nakamura , Rajesh Malhan
- 优先权： JP2004-276565 20040924
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
A semiconductor device includes (a) a vertical field effect transistor, the vertical field effect transistor including a drain electrode formed on a first surface of a first conductivity type of a semiconductor, a pair of first trenches formed from a second surface of the semiconductor, control regions of a second conductivity type formed respectively along the first trenches, a source region of the first conductivity type formed along the second surface of the semiconductor between the first trenches, a source electrode joined to the source region, and a gate electrode adjacent to the control regions, (b) a pair of second trenches formed from the second surface of the semiconductor independently of the field effect transistor, (c) control regions of the second conductivity type formed along the second trenches, and (d) a diode having a junction formed on the second surface between the second trenches.
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