发明申请
US20060079075A1 Gate structures with silicide sidewall barriers and methods of manufacturing the same
审中-公开
具有硅化物侧壁障碍的门结构及其制造方法
- 专利标题: Gate structures with silicide sidewall barriers and methods of manufacturing the same
- 专利标题(中): 具有硅化物侧壁障碍的门结构及其制造方法
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申请号: US11201736申请日: 2005-08-11
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公开(公告)号: US20060079075A1公开(公告)日: 2006-04-13
- 发明人: Chang-Won Lee , Sun-Pil Youn , Gil-Heyun Choi , Byung-Hak Lee , Hee-Sook Park , Dong-Chan Lim , Jong-Ryeol Yoo , Woong-Hee Sohn
- 申请人: Chang-Won Lee , Sun-Pil Youn , Gil-Heyun Choi , Byung-Hak Lee , Hee-Sook Park , Dong-Chan Lim , Jong-Ryeol Yoo , Woong-Hee Sohn
- 优先权: KR10-2004-0063555 20040812; KR10-2004-0106432 20041215
- 主分类号: H01L21/3205
- IPC分类号: H01L21/3205
摘要:
A gate structure includes a gate insulation layer on a substrate, a polysilicon layer pattern on the gate insulation layer, a composite metal layer pattern on the polysilicon layer pattern, and a metal silicide layer pattern on a sidewall of the composite metal layer pattern.