发明申请
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US11249681申请日： 2005-10-14
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公开(公告)号： US20060081836A1公开(公告)日： 2006-04-20
- 发明人: Yoshinobu Kimura , Nobuyuki Sugii , Shinichiro Kimura , Ryuta Tsuchiya , Shinichi Saito
- 申请人： Yoshinobu Kimura , Nobuyuki Sugii , Shinichiro Kimura , Ryuta Tsuchiya , Shinichi Saito
- 优先权： JP2004-299718 20041014; JP2005-271758 20050920
- 主分类号： H01L31/109
- IPC分类号： H01L31/109
摘要：
In a field effect semiconductor device for high frequency power amplification, it is difficult to achieve size reduction and increased efficiency simultaneously while ensuring voltage withstanding. A further improvement in efficiency is attained by using a strained Si channel for LDMOS at an output stage for high frequency power amplification. Further, the efficiency is improved as much as possible while decreasing a leak current, by optimizing the film thickness of the strained Si layer having a channel region, inactivation of defects and a field plate structure.
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