发明申请
- 专利标题： Transistor with a strained region and method of manufacture
- 专利标题（中）： 具有应变区域的晶体管及其制造方法
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申请号： US10967917申请日： 2004-10-18
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公开(公告)号： US20060081875A1公开(公告)日： 2006-04-20
- 发明人: Chun-Chieh Lin , Wen-Chin Lee , Yee-Chia Yeo , Chenming Hu
- 申请人： Chun-Chieh Lin , Wen-Chin Lee , Yee-Chia Yeo , Chenming Hu
- 主分类号： H01L31/109
- IPC分类号： H01L31/109 ; H01L31/0328 ; H01L29/76
摘要：
A transistor structure comprises a channel region overlying a substrate region. The substrate region comprises a first semiconductor material with a first lattice constant. The channel region comprises a second semiconductor material with a second lattice constant. The source and drain regions are oppositely adjacent the channel region and the top portion of the source and drain regions comprise the first semiconductor material. A gate dielectric layer overlies the channel region and a gate electrode overlies the gate dielectric layer.
公开/授权文献
- US07335929B2 Transistor with a strained region and method of manufacture 公开/授权日：2008-02-26
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