• 专利标题: Semiconductor storage device, its manufacturing method and operating method, and portable electronic apparatus
  • 申请号: US11289493
    申请日: 2005-11-30
  • 公开(公告)号: US20060081941A1
    公开(公告)日: 2006-04-20
  • 发明人: Hiroshi IwataAkihide Shibata
  • 申请人: Hiroshi IwataAkihide Shibata
  • 优先权: JP2001-356549 20011121
  • 主分类号: H01L29/76
  • IPC分类号: H01L29/76
Semiconductor storage device, its manufacturing method and operating method, and portable electronic apparatus
摘要:
The present invention provides a semiconductor storage device having: a first conductivity type region formed in a semiconductor layer; a second conductivity type region formed in the semiconductor layer in contact with the first conductivity type region; a memory functional element disposed on the semiconductor layer across the boundary of the first and second conductivity type regions; and an electrode provided in contact with the memory functional element and on the first conductivity type region via an insulation film, and a portable electronic apparatus comprising the semiconductor storage device. The present invention can fully cope with scale-down and high-integration by constituting a selectable memory cell substantially of one device.
信息查询
0/0