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    Semiconductor memory device, page buffer resource assigning method and circuit therefor, computer system and mobile electronic device
    3.
    发明授权
    Semiconductor memory device, page buffer resource assigning method and circuit therefor, computer system and mobile electronic device 有权
    半导体存储器件，页缓冲器资源分配方法及其电路，计算机系统和移动电子设备

    公开(公告)号：US07405974B2

    公开(公告)日：2008-07-29

    申请号：US10848324

    申请日：2004-05-19

    申请人： Yoshifumi Yaoi ,  Yasuaki Iwase ,  Hiroshi Iwata ,  Akihide Shibata ,  Yoshinao Morikawa ,  Masaru Nawaki

    发明人： Yoshifumi Yaoi ,  Yasuaki Iwase ,  Hiroshi Iwata ,  Akihide Shibata ,  Yoshinao Morikawa ,  Masaru Nawaki

    IPC分类号： G11C16/00

    CPC分类号： G11C16/10 ,  G11C7/10 ,  G11C7/1039 ,  G11C2207/2245

    摘要： A semiconductor memory device includes a page buffer circuit and an arrangement of memory elements each including: a gate electrode provided on a semiconductor layer with an intervening gate insulating film; a channel region provided beneath the gate electrode; a diffusion area provided on both sides of the channel region, having an opposite polarity to the channel region; and a memory functioning member provided on both sides of the gate electrodes, having a function of storing electric charge. The page buffer circuit provides a common resource shared between a memory array controller and a user. The page buffer circuit has two planes containing random access memory arrays. The page buffer circuit also includes a mode control section to facilitate access to the planes over a main bus in user mode and access to the planes by the memory array controller in memory control mode.

    摘要翻译： 半导体存储器件包括页缓冲电路和存储元件的布置，每个存储元件包括：设置在具有中间栅极绝缘膜的半导体层上的栅电极; 设置在栅电极下方的沟道区; 扩散区，设置在沟道区的两侧，具有与沟道区相反的极性; 以及设置在栅电极两侧的具有存储电荷功能的记忆功能部件。 页面缓冲电路提供了在存储器阵列控制器和用户之间共享的公共资源。 页面缓冲电路具有包含随机存取存储器阵列的两个平面。 页面缓冲电路还包括模式控制部分，以便以用户模式访问主总线上的平面并且以存储器控制模式通过存储器阵列控制器访问平面。

    Semiconductor storage device and manufacturing method therefor, semiconductor device, portable electronic equipment and IC card
    4.
    发明授权
    Semiconductor storage device and manufacturing method therefor, semiconductor device, portable electronic equipment and IC card 有权
    半导体存储器件及其制造方法，半导体器件，便携式电子设备和IC卡

    公开(公告)号：US07312499B2

    公开(公告)日：2007-12-25

    申请号：US11414226

    申请日：2006-05-01

    申请人： Hiroshi Iwata ,  Takayuki Ogura ,  Akihide Shibata ,  Kouichirou Adachi

    发明人： Hiroshi Iwata ,  Takayuki Ogura ,  Akihide Shibata ,  Kouichirou Adachi

    IPC分类号： H01L29/792

    CPC分类号： H01L27/11568 ,  G11C16/0491 ,  H01L21/28282 ,  H01L21/28291 ,  H01L21/76831 ,  H01L21/76897 ,  H01L27/115 ,  H01L29/42332 ,  H01L29/6656 ,  H01L29/66833 ,  H01L29/7887 ,  H01L29/7923 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor storage device includes a field effect transistor which has a gate insulator, a gate electrode and a pair of source/drain diffusion regions on a semiconductor substrate. The device also includes a coating film made of a dielectric having a function of storing electric charge and formed on the substrate in such a manner as to cover an upper surface and side surfaces of the gate electrode. The device further includes an interlayer insulator formed on and in contact with the coating film. The device still further includes contact members which extend vertically through the interlayer insulator and the coating film on the source/drain diffusion regions and which are electrically connected to the source/drain diffusion regions, respectively. The coating film and the interlayer insulator are made of materials which are selectively etchable to each other. Thus, the issues of overerase and read failures due to the overerase can be solved, and the device reliability can be enhanced.

    摘要翻译： 半导体存储装置包括在半导体衬底上具有栅极绝缘体，栅极电极和一对源极/漏极扩散区域的场效应晶体管。 该装置还包括由电介质构成的涂膜，其具有存储电荷的功能，并以覆盖栅电极的上表面和侧表面的方式形成在基板上。 该装置还包括形成在涂膜上并与涂膜接触的层间绝缘体。 该装置还包括分别垂直延伸通过层间绝缘体和源极/漏极扩散区上的涂膜并且分别与源/漏扩散区电连接的接触构件。 涂膜和层间绝缘体由可相互选择性地蚀刻的材料制成。 因此，可以解决由于过度过热导致的过度读取和读取故障的问题，并且可以提高器件的可靠性。

    Display driver, display device, and portable electronic apparatus
    5.
    发明授权
    Display driver, display device, and portable electronic apparatus 有权
    显示驱动器，显示设备和便携式电子设备

    公开(公告)号：US07271799B2

    公开(公告)日：2007-09-18

    申请号：US10844567

    申请日：2004-05-13

    申请人： Hiroshi Iwata ,  Akihide Shibata

    发明人： Hiroshi Iwata ,  Akihide Shibata

    IPC分类号： G09G5/00

    CPC分类号： H01L29/66833 ,  G09G3/20 ,  H01L21/28282 ,  H01L29/792

    摘要： A display driver includes a display driving part for receiving image data and outputting a drive signal to a display panel; a nonvolatile memory part for storing control information for controlling output of the display driving part; and a control part for controlling output of the display driving part on the basis of the control information, wherein the nonvolatile memory part has a nonvolatile memory cell, and the nonvolatile memory cell includes a gate electrode formed on a semiconductor layer via a gate insulating film, a channel region disposed under the gate electrode, diffusion regions disposed on both sides of the channel region and having a conductive type opposite to that of the channel region, and memory functional units formed on both sides of the gate electrode and having a function for retaining charges.

    摘要翻译： 显示驱动器包括用于接收图像数据并向显示面板输出驱动信号的显示驱动部分; 非易失性存储器部分，用于存储用于控制显示驱动部分的输出的控制信息; 以及控制部分，用于根据控制信息控制显示驱动部分的输出，其中非易失性存储器部分具有非易失性存储单元，并且非易失性存储单元包括通过栅极绝缘膜形成在半导体层上的栅电极 设置在所述栅电极下方的沟道区域，设置在所述沟道区域的两侧且具有与沟道区域相反的导电类型的扩散区域，以及形成在所述栅极电极两侧的存储功能单元， 保留费用。

    Semiconductor storage device, its manufacturing method and operating method, and portable electronic apparatus
    7.
    发明授权
    Semiconductor storage device, its manufacturing method and operating method, and portable electronic apparatus 有权
    半导体存储装置及其制造方法和操作方法以及便携式电子装置

    公开(公告)号：US07164167B2

    公开(公告)日：2007-01-16

    申请号：US10480893

    申请日：2002-11-18

    申请人： Hiroshi Iwata ,  Akihide Shibata

    发明人： Hiroshi Iwata ,  Akihide Shibata

    IPC分类号： H01L29/788 ,  H01L29/76

    CPC分类号： H01L29/66833 ,  B82Y10/00 ,  G11C16/0466 ,  H01L21/84 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11568 ,  H01L27/118 ,  H01L27/1203 ,  H01L29/792 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention provides a semiconductor storage device having: a first conductivity type region formed in a semiconductor layer; a second conductivity type region formed in the semiconductor layer in contact with the first conductivity type region; a memory functional element disposed on the semiconductor layer across the boundary of the first and second conductivity type regions; and an electrode provided in contact with the memory functional element and on the first conductivity type region via an insulation film, and a portable electronic apparatus comprising the semiconductor storage device. The present invention can fully cope with scale-down and high-integration by constituting a selectable memory cell substantially of one device.

    摘要翻译： 本发明提供一种半导体存储装置，具有：形成在半导体层中的第一导电型区域; 形成在与第一导电类型区域接触的半导体层中的第二导电类型区域; 存储功能元件，设置在跨越第一和第二导电类型区域的边界的半导体层上; 以及通过绝缘膜与所述存储功能元件和所述第一导电类型区域接触地设置的电极，以及包括所述半导体存储装置的便携式电子设备。 本发明可以通过构成基本上由一个设备构成的可选存储单元来完全应对缩小和高集成度。

    Semiconductor storage device having a function to convert changes of an electric charge amount to a current amount
    8.
    发明授权
    Semiconductor storage device having a function to convert changes of an electric charge amount to a current amount 有权
    具有将电荷量变化为电流量的功能的半导体存储装置

    公开(公告)号：US07141849B2

    公开(公告)日：2006-11-28

    申请号：US10530519

    申请日：2003-10-01

    申请人： Hiroshi Iwata ,  Akihide Shibata

    发明人： Hiroshi Iwata ,  Akihide Shibata

    IPC分类号： H01L29/792

    CPC分类号： H01L29/66825 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/66833 ,  H01L29/7887 ,  H01L29/7923

    摘要： In a semiconductor storage device, a gate insulating film and a gate electrode are laid on a first conductivity type semiconductor substrate, and charge holding portions are formed on both sides of the gate electrode. Second conductivity type first and second diffusion layer regions are formed in regions of the semiconductor substrate corresponding to the charge holding portions. The charge holding portions are each structured so as to change, in accordance with an electric charge amount held in the charge holding portions, a current amount flowing from one of the second conductivity type diffusion layer regions to the other of the diffusion layer regions through a channel region when voltage is applied to the gate electrode. Part of each charge holding portion is present below an interface of the gate insulating film and the channel region.

    摘要翻译： 在半导体存储装置中，在第一导电型半导体基板上铺设栅极绝缘膜和栅电极，在栅电极的两侧形成电荷保持部。 第二导电类型的第一和第二扩散层区域形成在对应于电荷保持部分的半导体衬底的区域中。 电荷保持部分被构造成根据保持在电荷保持部分中的电荷量，通过一个第二导电类型扩散层区域中的一个流过另一个扩散层区域的电流量 沟道区域，当电压施加到栅电极时。 每个电荷保持部分的一部分存在于栅绝缘膜和沟道区的界面之下。

    Semiconductor storage device and mobile electronic apparatus
    9.
    发明授权
    Semiconductor storage device and mobile electronic apparatus 失效
    半导体存储设备和移动电子设备

    公开(公告)号：US07116579B2

    公开(公告)日：2006-10-03

    申请号：US10851517

    申请日：2004-05-20

    申请人： Yoshinao Morikawa ,  Masaru Nawaki ,  Hiroshi Iwata ,  Akihide Shibata

    发明人： Yoshinao Morikawa ,  Masaru Nawaki ,  Hiroshi Iwata ,  Akihide Shibata

    IPC分类号： G11C11/34

    CPC分类号： G11C16/0475

    摘要： A semiconductor storage device is provided, which comprises a memory array comprising memory elements, a write state machine for performing a sequence of a program or erase operation with respect to the memory array, a decoder for decoding a signal indicating a current state of the write state machine, which is output from the write state machine, and outputting a status signal indicating a status of the program or erase operation with respect to the memory array, a status register for storing the status signal, and an output circuit for outputting the status signal stored in the status register. Each memory element comprises a gate electrode, a channel region, diffusion regions, and memory function sections provided on opposite sides of the gate electrode and having a function of retaining charges.

    摘要翻译： 提供了一种半导体存储装置，其包括存储器阵列，其包括存储器元件，用于执行关于存储器阵列的编程或擦除操作序列的写入状态机，用于对指示写入的当前状态的信号进行解码的解码器 状态机，其从写入状态机输出，并且输出指示关于存储器阵列的编程或擦除操作的状态的状态信号，用于存储状态信号的状态寄存器，以及用于输出状态的输出电路 信号存储在状态寄存器中。 每个存储元件包括栅电极，沟道区，扩散区和设置在栅电极的相对侧上并具有保持电荷的功能的存储功能部。

    Semiconductor memory having two charge storage sections
    10.
    发明授权
    Semiconductor memory having two charge storage sections 有权
    具有两个电荷存储部分的半导体存储器

    公开(公告)号：US07095077B2

    公开(公告)日：2006-08-22

    申请号：US10824394

    申请日：2004-04-15

    申请人： Kotaro Kataoka ,  Hiroshi Iwata ,  Akihide Shibata

    发明人： Kotaro Kataoka ,  Hiroshi Iwata ,  Akihide Shibata

    IPC分类号： H01L29/792

    CPC分类号： H01L29/66833 ,  H01L21/28282 ,  H01L29/7923

    摘要： A semiconductor memory includes: a p-type semiconductor (p-type semiconductor film on a substrate, a p-type well region in a semiconductor substrate, or an insulator); a gate insulating film formed on the p-type semiconductor; a gate electrode formed on the gate insulating film; two charge storage sections formed on side walls of the gate electrode; a channel region provided below the gate electrode; and a first n-type diffusion layer region and a second n-type diffusion layer region provided to sides of the channel region, wherein: the charge storage sections are arranged to change an electric current flow between the first n-type diffusion layer region and the second n-type diffusion layer region under application of a voltage to the gate electrode according to the quantity of electric charges stored in the charge storage sections; and the first n-type diffusion layer region is set to a reference voltage, the other n-type diffusion layer region is set to a voltage greater than the reference voltage, and the gate electrode is set to a voltage greater than the reference voltage. Thus, the semiconductor memory obtained is capable of 2 bit operation and easy to miniaturize.

    摘要翻译： 半导体存储器包括：p型半导体（衬底上的p型半导体膜，半导体衬底中的p型阱区或绝缘体）; 形成在p型半导体上的栅极绝缘膜; 形成在栅极绝缘膜上的栅电极; 形成在栅电极的侧壁上的两个电荷存储部分; 设置在栅电极下方的沟道区; 以及设置在沟道区域的侧面的第一n型扩散层区域和第二n型扩散层区域，其中：电荷存储部分被布置成改变第一n型扩散层区域和 根据存储在电荷存储部中的电荷量，向栅电极施加电压的第二n型扩散层区域; 并且将第一n型扩散层区域设定为基准电压，将另一n型扩散层区域设定为大于基准电压的电压，将栅极电极设定为大于基准电压的电压。 因此，所获得的半导体存储器能够进行2位操作并且容易小型化。