发明申请
US20060090702A1 Duplex chemical vapor deposition system and pulsed processing method using the same
审中-公开
双相化学气相沉积系统和使用其的脉冲处理方法
- 专利标题： Duplex chemical vapor deposition system and pulsed processing method using the same
- 专利标题（中）： 双相化学气相沉积系统和使用其的脉冲处理方法
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申请号： US11185689申请日： 2005-07-21
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公开(公告)号： US20060090702A1公开(公告)日： 2006-05-04
- 发明人: June-mo Koo , Young-soo Park , Sang-min Shin , Suk-pil Kim
- 申请人： June-mo Koo , Young-soo Park , Sang-min Shin , Suk-pil Kim
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 优先权： KR10-2004-0086540 20041028
- 主分类号： C23C16/00
- IPC分类号： C23C16/00
摘要：
Embodiments are provided of a duplex chemical vapor deposition (CVD) system and pulsed processing method using the same. The duplex CVD system may include first and second process chambers, one or more reactive sources, and reactive source suppliers that correspond to the reactive sources, respectively. The reactive source suppliers may include a first conduit portion connected to the respective reactive sources, a second conduit portion having one terminal connected to the first conduit portion and the other terminal connected to the first process chamber, and a third conduit portion having one terminal connected to the first conduit portion and the other terminal connected to the second process chamber.
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