发明申请
- 专利标题： Semiconductor device and method of fabricating the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11208000申请日： 2005-08-22
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公开(公告)号： US20060091401A1公开(公告)日： 2006-05-04
- 发明人: Takahiko Yoshizawa , Noriaki Matsunaga , Naofumi Nakamura
- 申请人： Takahiko Yoshizawa , Noriaki Matsunaga , Naofumi Nakamura
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 优先权： JP2004-318375 20041101
- 主分类号： H01L31/0312
- IPC分类号： H01L31/0312
摘要：
The semiconductor device fabrication method according the present invention having, forming an interlayer dielectric film containing carbon above a semiconductor substrate, forming a protective film on that portion of the interlayer dielectric film, which is close to the surface and in which the carbon concentration is low, forming a trench by selectively removing a desired region of the interlayer dielectric film and protective film, such that the region extends from the surface of the protective film to the bottom surface of the interlayer dielectric film, supplying carbon to the interface between the interlayer dielectric film and protective film, and forming a conductive layer by burying a conductive material in the trench.
公开/授权文献
- US07459391B2 Semiconductor device and method of fabricating the same 公开/授权日：2008-12-02
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