发明申请
- 专利标题： Sub-lithographic structures, devices including such structures, and methods for producing the same
- 专利标题（中）： 亚光刻结构，包括这种结构的装置及其制造方法
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申请号： US11258367申请日： 2005-10-26
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公开(公告)号： US20060091476A1公开(公告)日： 2006-05-04
- 发明人: Cay-Uwe Pinnow , Thomas Happ , Michael Kund , Gerhard Mueller
- 申请人： Cay-Uwe Pinnow , Thomas Happ , Michael Kund , Gerhard Mueller
- 优先权： DE102004052611.7 20041029
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L23/48 ; H01L23/52 ; H01L29/00
摘要：
A method which makes it possible to define in a patterning layer openings having a first dimension that is substantially less than the feature size that can be obtained lithographically includes applying a sacrificial layer made of a material that is different from that of the patterning layer in a predetermined layer thickness on the patterning layer. Afterward, a photoresist layer is applied on the surface of the sacrificial layer, and an opening having a second dimension is defined lithographically in the photoresist layer. Afterward, an etching angle is set in a manner dependent on the layer thickness of the sacrificial layer and also the first and second dimensions, and the sacrificial layer is etched at the etching angle set. Afterward, the patterning layer is etched, the sacrificial layer is removed and a filling material is introduced into the opening produced in the patterning layer.
公开/授权文献
- US07514362B2 Integrated circuit including sub-lithographic structures 公开/授权日：2009-04-07
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