- 专利标题： Hardmask for improved reliability of silicon based dielectrics
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申请号： US10981233申请日： 2004-11-04
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公开(公告)号： US20060091559A1公开(公告)日： 2006-05-04
- 发明人: Son Nguyen , Michael Lane , Stephen Gates , Xiao Liu , Vincent McGahay , Sanjay Mehta , Thomas Shaw
- 申请人： Son Nguyen , Michael Lane , Stephen Gates , Xiao Liu , Vincent McGahay , Sanjay Mehta , Thomas Shaw
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L23/52 ; H01L21/31
摘要：
The present invention provides a hardmask that is located on a surface of a low k dielectric material having at least one conductive feature embedded therein. The hardmask includes a lower region of a hermetic oxide material located adjacent to the low k dielectric material and an upper region comprising atoms of Si, C and H located above the hermetic oxide material. The present invention also provides a method of fabricating the inventive hardmask as well as a method to form an interconnect structure containing the same.
公开/授权文献
- US07335980B2 Hardmask for reliability of silicon based dielectrics 公开/授权日：2008-02-26
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