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发明申请
US20060096541A1 Apparatus and method of forming a layer on a semiconductor substrate 审中-公开
在半导体衬底上形成层的装置和方法

Apparatus and method of forming a layer on a semiconductor substrate
摘要：
In an apparatus for forming a layer, the apparatus includes a processing chamber, a chuck, a gas-supplying unit, and a pipe unit. The chuck for supporting a substrate is disposed in the processing chamber. The gas-supplying unit supplies a source gas for forming a layer on the substrate and a purge gas for purging the inside of the processing chamber to the processing chamber. The pipe unit transfers the source gas and the purge gas to the processing chamber at a temperature that falls between the temperature of condensation and a reaction temperature for the source gas so that condensation or deposition reaction does not occur until the source gas enters the processing chamber. A heater located outside of the chamber heats the purge gas that is supplied to the processing chamber to a predetermined temperature.
摘要（中）：

在用于形成层的装置中，该装置包括处理室，卡盘，气体供应单元和管道单元。 用于支撑基板的卡盘设置在处理室中。 气体供给单元将用于在基板上形成层的源气体和用于向处理室吹扫处理室内部的净化气体。 管单元将源气体和净化气体以处于冷凝温度和源气体的反应温度之间的温度转移到处理室，使得在气体进入处理室之前不发生冷凝或沉积反应 。 位于室外的加热器将提供给处理室的吹扫气体加热到预定温度。

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