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    Method of depositing a metal compound layer and apparatus for depositing a metal compound layer
    1.
    发明申请
    Method of depositing a metal compound layer and apparatus for depositing a metal compound layer 审中-公开
    沉积金属化合物层的方法和沉积金属化合物层的装置

    公开(公告)号：US20060128127A1

    公开(公告)日：2006-06-15

    申请号：US11290648

    申请日：2005-12-01

    申请人： Jung-Hun Seo ,  Young-Wook Park ,  Jin-Gi Hong ,  Kyung-Bum Koo ,  Eun-Taeck Lee

    发明人： Jung-Hun Seo ,  Young-Wook Park ,  Jin-Gi Hong ,  Kyung-Bum Koo ,  Eun-Taeck Lee

    IPC分类号： H01L21/20

    CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/45523 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574

    摘要： In a method and an apparatus for depositing a metal compound layer, a first source gas and a second source gas may be provided onto a substrate to deposit a first metal compound layer on the substrate. The first source gas may include a metal and halogen elements, and the second source gas may include a first material capable of being reacted with the metal and a second material capable of being reacted with the halogen element. The first and the second source gases may be provided at a first flow rate ratio. A second metal compound layer may be deposited on the first metal compound layer by providing the first and the second source gases with a second flow rate ratio different from the first flow rate ratio. The apparatus may include a process chamber configured to receive a substrate, a gas supply system, and a flow rate control device.

    摘要翻译： 在用于沉积金属化合物层的方法和装置中，可以将第一源气体和第二源气体提供到衬底上以在衬底上沉积第一金属化合物层。 第一源气体可以包括金属和卤素元素，并且第二源气体可以包括能够与金属反应的第一材料和能够与卤素元素反应的第二材料。 第一和第二源气体可以以第一流量比提供。 可以通过使第一和第二源气体具有与第一流量比不同的第二流量比，将第二金属化合物层沉积在第一金属化合物层上。 该装置可以包括被配置为接收基板，气体供应系统和流量控制装置的处理室。

    Apparatus and method of forming a layer on a semiconductor substrate
    3.
    发明申请
    Apparatus and method of forming a layer on a semiconductor substrate 审中-公开
    在半导体衬底上形成层的装置和方法

    公开(公告)号：US20060096541A1

    公开(公告)日：2006-05-11

    申请号：US11258673

    申请日：2005-10-25

    申请人： Jung-Hun Seo ,  Young-Wook Park ,  Jin-Gi Hong ,  Kyung-Bum Koo ,  Eun-Taeck Lee

    发明人： Jung-Hun Seo ,  Young-Wook Park ,  Jin-Gi Hong ,  Kyung-Bum Koo ,  Eun-Taeck Lee

    IPC分类号： C23C16/00

    CPC分类号： C23C16/34 ,  C23C16/4408 ,  C23C16/4482 ,  C23C16/45561 ,  C23C16/45565

    摘要： In an apparatus for forming a layer, the apparatus includes a processing chamber, a chuck, a gas-supplying unit, and a pipe unit. The chuck for supporting a substrate is disposed in the processing chamber. The gas-supplying unit supplies a source gas for forming a layer on the substrate and a purge gas for purging the inside of the processing chamber to the processing chamber. The pipe unit transfers the source gas and the purge gas to the processing chamber at a temperature that falls between the temperature of condensation and a reaction temperature for the source gas so that condensation or deposition reaction does not occur until the source gas enters the processing chamber. A heater located outside of the chamber heats the purge gas that is supplied to the processing chamber to a predetermined temperature.

    摘要翻译： 在用于形成层的装置中，该装置包括处理室，卡盘，气体供应单元和管道单元。 用于支撑基板的卡盘设置在处理室中。 气体供给单元将用于在基板上形成层的源气体和用于向处理室吹扫处理室内部的净化气体。 管单元将源气体和净化气体以处于冷凝温度和源气体的反应温度之间的温度转移到处理室，使得在气体进入处理室之前不发生冷凝或沉积反应 。 位于室外的加热器将提供给处理室的吹扫气体加热到预定温度。

    Chamber inserts and apparatuses for processing a substrate
    4.
    发明授权
    Chamber inserts and apparatuses for processing a substrate 有权
    腔体插入件和用于处理衬底的装置

    公开(公告)号：US08366827B2

    公开(公告)日：2013-02-05

    申请号：US11447933

    申请日：2006-06-07

    申请人： Jung-Hun Seo ,  Jin-Gi Hong ,  Kyung-Bum Koo ,  Yun-Ho Choi ,  Eun-Taeck Lee ,  Hyun Chul Kwun

    发明人： Jung-Hun Seo ,  Jin-Gi Hong ,  Kyung-Bum Koo ,  Yun-Ho Choi ,  Eun-Taeck Lee ,  Hyun Chul Kwun

    IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

    CPC分类号： H01L21/68721 ,  C23C16/44 ,  C23C16/4408 ,  C23C16/45519 ,  C23C16/45591 ,  Y10T29/41

    摘要： Disclosed are chamber inserts and apparatuses using the chamber inserts. A chamber insert may include a cylindrical body portion including a top end portion and a bottom end portion, a first protruding portion extending outwardly from a first portion of the cylindrical body portion, the first portion positioned circumferentially along the cylindrical body portion and a second protruding portion extending outwardly from a second portion of the cylindrical body portion, the second portion positioned circumferentially along less than all of the cylindrical body portion. In another example, the chamber insert may include a cylindrical body portion including a top end portion and a bottom end portion, the cylindrical body portion including a slit and at least one hole, the slit and the at least one hole positioned circumferentially along the cylindrical body portion and a first protruding portion extending outwardly from a first portion of the cylindrical body portion.

    摘要翻译： 公开了使用腔室插入件的腔室插入件和装置。 腔室插入件可以包括包括顶端部分和底端部分的圆柱形主体部分，从圆柱形主体部分的第一部分向外延伸的第一突出部分，沿着圆柱形主体部分周向定位的第一部分和第二突出部分 该部分从圆柱形主体部分的第二部分向外延伸，第二部分沿着比圆柱形主体部分的全部圆周方向定位。 在另一示例中，腔室插入件可以包括包括顶端部分和底端部分的圆柱体部分，该圆柱形主体部分包括狭缝和至少一个孔，所述狭缝和至少一个孔沿着圆柱形 主体部分和从圆柱形主体部分的第一部分向外延伸的第一突出部分。

    Chamber inserts and apparatuses for processing a substrate
    5.
    发明申请
    Chamber inserts and apparatuses for processing a substrate 有权
    腔体插入件和用于处理衬底的装置

    公开(公告)号：US20070000109A1

    公开(公告)日：2007-01-04

    申请号：US11447933

    申请日：2006-06-07

    申请人： Jung-Hun Seo ,  Jin-Gi Hong ,  Kyung-Bum Koo ,  Yun-Ho Choi ,  Eun-Taeck Lee ,  Hyun Kwun

    发明人： Jung-Hun Seo ,  Jin-Gi Hong ,  Kyung-Bum Koo ,  Yun-Ho Choi ,  Eun-Taeck Lee ,  Hyun Kwun

    IPC分类号： H01L21/00

    CPC分类号： H01L21/68721 ,  C23C16/44 ,  C23C16/4408 ,  C23C16/45519 ,  C23C16/45591 ,  Y10T29/41

    摘要： Chamber inserts and apparatuses for processing a substrate. In an example, the chamber insert may include a cylindrical body portion including an open top end portion and an open bottom end portion, a first protruding portion extending outwardly from a first portion of the cylindrical body portion, the first portion positioned circumferentially along the cylindrical body portion and a second protruding portion extending outwardly from a second portion of the cylindrical body portion, the second portion positioned circumferentially along less than all of the cylindrical body portion. In another example, the chamber insert may include a cylindrical body portion including an open top end portion and an open bottom end portion, the cylindrical body portion including a slit and at least one hole, the slit and the at least one hole positioned circumferentially along the cylindrical body portion and a first protruding portion extending outwardly from a first portion of the cylindrical body portion. The apparatuses may include the chamber inserts according to either of the above-described examples.

    摘要翻译： 腔体插入件和用于处理衬底的装置。 在一个示例中，腔室插入件可以包括圆柱形主体部分，其包括敞开的顶端部分和敞开的底部端部，从圆柱形主体部分的第一部分向外延伸的第一突出部分，沿着圆柱体 主体部分和从圆柱形主体部分的第二部分向外延伸的第二突出部分，第二部分沿着小于全部圆柱形主体部分周向定位。 在另一示例中，腔室插入件可以包括圆柱形主体部分，其包括敞开的顶端部分和敞开的底端部分，所述圆柱形主体部分包括狭缝和至少一个孔，所述狭缝和所述至少一个孔周向沿着 圆柱体部分和从圆柱形主体部分的第一部分向外延伸的第一突出部分。 这些装置可以包括根据上述示例中的任一个的腔室插入件。

    ALD thin film deposition apparatus and thin film deposition method using same
    6.
    发明申请
    ALD thin film deposition apparatus and thin film deposition method using same 审中-公开
    ALD薄膜沉积装置和使用其的薄膜沉积方法

    公开(公告)号：US20060045970A1

    公开(公告)日：2006-03-02

    申请号：US11216431

    申请日：2005-08-30

    申请人： Jung-Hun Seo ,  Young-Wook Park ,  Jin-Gi Hong ,  Eun-Taeck Lee

    发明人： Jung-Hun Seo ,  Young-Wook Park ,  Jin-Gi Hong ,  Eun-Taeck Lee

    IPC分类号： C23C16/00

    CPC分类号： C23C16/45544

    摘要： An atomic layer deposition (ALD) thin film deposition apparatus is provided. The atomic layer deposition (ALD) thin film deposition apparatus comprises a reactor including a support on which at least one substrate is placed and a member from which gases are sprayed, a first reaction gas supply line which is coupled with a first reaction gas supply portion which allows a first reaction gas to flow from the first reaction gas supply portion to the reactor, a second reaction gas supply line which is coupled with a second reaction gas supply portion which allows a second reaction gas to flow from the second reaction gas supply portion to the reactor for reacting with the first reaction gas, a purge gas supply line which is coupled with a purge gas supply portion and allows a purge gas to flow from the purge gas supply portion to the reactor for conducting a purge step, and an exhaust line which exhausts a gas from within the reactor to a location outside the reactor. An ALD thin film deposition method is also provided.

    摘要翻译： 提供了一种原子层沉积（ALD）薄膜沉积装置。 原子层沉积（ALD）薄膜沉积设备包括一个反应器，该反应器包括一个载体上至少有一个基底和一个被喷射气体的构件，第一反应气体供应管线与第一反应气体供应部分 其允许第一反应气体从第一反应气体供给部流向反应器;第二反应气体供给管，其与第二反应气体供给部相连，允许第二反应气体从第二反应气体供给部 与反应器反应，与第一反应气体反应，净化气体供应管线，其与净化气体供应部分相连，并允许净化气体从吹扫气体供应部分流到反应器进行吹扫步骤;以及排气 将从反应器内的气体排出到反应器外部的位置。 还提供了一种ALD薄膜沉积方法。

    Method of manufacturing a capacitor
    7.
    发明申请
    Method of manufacturing a capacitor 审中-公开
    制造电容器的方法

    公开(公告)号：US20060292810A1

    公开(公告)日：2006-12-28

    申请号：US11448769

    申请日：2006-06-08

    申请人： Jung-Hun Seo ,  Hyun-Young Kim ,  Young-Wook Park ,  Jin-Gi Hong ,  Kun-Sang Park ,  Jin-Ho Kim ,  Kyung-Bum Koo

    发明人： Jung-Hun Seo ,  Hyun-Young Kim ,  Young-Wook Park ,  Jin-Gi Hong ,  Kun-Sang Park ,  Jin-Ho Kim ,  Kyung-Bum Koo

    IPC分类号： H01L21/20

    CPC分类号： H01L28/91 ,  H01L21/28562 ,  H01L27/10817 ,  H01L27/10852

    摘要： In methods of manufacturing capacitors, a first metal compound may be deposited on a substrate using first and second source gases. The first and the second source gases may be provided onto the substrate by a first flow rate ratio in which a deposition rate of the first metal compound by surface reaction between the source gases is higher than that by mass transfer between the source gases. A second metal compound may be deposited on the first metal compound and undesired materials may be removed by providing the source gases with a second flow rate ratio different from the first flow rate ratio. Depositing the first and the second metal compounds may be repeated to form a lower electrode. A dielectric layer and an upper electrode may be formed on the lower electrode. Accordingly, permeation of an etching liquid or gas may be reduced during an etching process.

    摘要翻译： 在制造电容器的方法中，可以使用第一和第二源气体在基板上沉积第一金属化合物。 可以通过第一流量比将第一和第二源气体提供到基底上，其中通过源气体之间的表面反应使第一金属化合物的沉积速率高于源气体之间的质量传递的沉积速率。 可以将第二金属化合物沉积在第一金属化合物上，并且可以通过提供不同于第一流速比的第二流量比来提供源气体来除去不需要的物质。 可以重复沉积第一和第二金属化合物以形成下电极。 电介质层和上电极可以形成在下电极上。 因此，在蚀刻过程中可能会减少蚀刻液体或气体的渗透。

    Method and apparatus of forming thin film using atomic layer deposition
    10.
    发明申请
    Method and apparatus of forming thin film using atomic layer deposition 审中-公开
    使用原子层沉积法形成薄膜的方法和装置

    公开(公告)号：US20060024964A1

    公开(公告)日：2006-02-02

    申请号：US11154045

    申请日：2005-06-15

    申请人： Jung-Hun Seo ,  Young-Wook Park ,  Jin-Gi Hong

    发明人： Jung-Hun Seo ,  Young-Wook Park ,  Jin-Gi Hong

    IPC分类号： H01L21/44 ,  C23C16/00

    CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/452 ,  C23C16/45544

    摘要： The method of forming a TiN thin film using an atomic layer deposition (ALD) method includes thermally decomposing TiCl4; introducing a pyrolyzed product of the TiCl4 into the chamber; supplying a first purge gas into the chamber; supplying a reactant gas into the chamber, thereby forming a TiN thin film; and supplying a second purge gas into the chamber. The apparatus of forming a TiN thin film includes a gas conduit having an entrance line into which a source gas, TiCl4 is introduced; a heater installed around the gas conduit and thermally decomposing the introduced source gas, TiCl4, in advance to make a secondary source gas; and a chamber being connected to the gas conduit and having a reaction room in which the TiN thin film is formed by the reaction of the secondary source gas and NH3 as a reactant gas. Therefore, a TiN thin film growth rate can be improved.

    摘要翻译： 使用原子层沉积（ALD）法形成TiN薄膜的方法包括：热分解TiCl 4; 将TiCl 4的热解产物引入室中; 将第一吹扫气体供应到所述室中; 将反应气体供应到室中，由此形成TiN薄膜; 以及将第二吹扫气体供应到所述室中。 形成TiN薄膜的装置包括具有入口管的气体导管，引入源气体TiCl 4; 安装在气体管道周围的加热器，并预先将引入的源气体TiCl 4分解，以形成二次源气体; 以及与气体导管连接的室，具有反应室，在该反应室中，作为反应气体的二次气体和NH 3 3反应形成TiN薄膜。 因此，可以提高TiN薄膜的生长速度。