发明申请
- 专利标题： Semiconductor substrate and process for producing it
- 专利标题（中）： 半导体衬底及其制造方法
-
申请号： US11266164申请日： 2005-11-03
-
公开(公告)号： US20060097317A1公开(公告)日： 2006-05-11
- 发明人: Dirk Dantz , Andreas Huber , Reinhold Wahlich , Brian Murphy
- 申请人： Dirk Dantz , Andreas Huber , Reinhold Wahlich , Brian Murphy
- 申请人地址： DE Munich
- 专利权人： Siltronic AG
- 当前专利权人： Siltronic AG
- 当前专利权人地址： DE Munich
- 优先权： DE102004054564.2 20041111
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L31/117
摘要：
A semiconductor substrate useful as a donor wafer is a single-crystal silicon wafer having a relaxed, single-crystal layer containing silicon and germanium on its surface, the germanium content at the surface of the layer being in the range from 10% by weight to 100% by weight, and a layer of periodically arranged cavities below the surface. The invention also relates to a process for producing this semiconductor substrate and to an sSOI wafer produced from this semiconductor substrate.
公开/授权文献
- US07279700B2 Semiconductor substrate and process for producing it 公开/授权日：2007-10-09
信息查询
IPC分类:
