公开(公告)号：US07803695B2

公开(公告)日：2010-09-28

申请号：US12270042

申请日：2008-11-13

申请人： Dirk Dantz ,  Andreas Huber ,  Reinhold Wahlich ,  Brian Murphy

发明人： Dirk Dantz ,  Andreas Huber ,  Reinhold Wahlich ,  Brian Murphy

IPC分类号： H01L21/30

CPC分类号： H01L21/187 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/76251

摘要： A process for producing a semiconductor substrate comprising a carrier wafer and a layer of single-crystalline semiconductor material:a) producing a layer containing recesses at the surface of a donor wafer of single-crystalline semiconductor material,b) joining the surface of the donor wafer containing recesses to the carrier wafer,c) heat treating to close the recesses at the interface between the carrier wafer and the donor wafer to form a layer of cavities within the donor wafer, andd) splitting the donor wafer along the layer of cavities, resulting in a layer of semiconductor material on the carrier wafer. Semiconductor substrates prepared thusly may have a single-crystalline semiconductor layer having a thickness of 100 nm or less, a layer thickness uniformity of 5% or less, and an HF defect density of 0.02/cm2 or less.

摘要翻译： 一种制造半导体衬底的方法，包括载体晶片和单晶半导体材料层：a）在单晶半导体材料的施主晶片的表面上产生包含凹陷的层，b）将所述供体的表面 晶片容纳凹槽到载体晶片，c）热处理以关闭在载体晶片和施主晶片之间的界面处的凹槽，以在施主晶片内形成一层空腔，以及d）沿着该空腔层分裂供体晶片 ，从而在载体晶片上产生一层半导体材料。 因此制备的半导体衬底可以具有厚度为100nm以下，层厚均匀度为5％以下，HF缺陷密度为0.02 / cm 2以下的单晶半导体层。

公开(公告)号：US20070281441A1

公开(公告)日：2007-12-06

申请号：US11775475

申请日：2007-07-10

申请人： Dirk Dantz ,  Andreas Huber ,  Reinhold Wahlich ,  Brian Murphy

发明人： Dirk Dantz ,  Andreas Huber ,  Reinhold Wahlich ,  Brian Murphy

IPC分类号： H01L21/20

CPC分类号： H01L21/76251 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02658

摘要： A semiconductor substrate useful as a donor wafer is a single-crystal silicon wafer having a relaxed, single-crystal layer containing silicon and germanium on its surface, the germanium content at the surface of the layer being in the range from 10% by weight to 100% by weight, and a layer of periodically arranged cavities below the surface. The invention also relates to a process for producing this semiconductor substrate and to an sSOI wafer produced from this semiconductor substrate.

摘要翻译： 可用作施主晶片的半导体衬底是其表面上具有含有硅和锗的松弛的单晶层的单晶硅晶片，该层表面的锗含量在10重量％至 100重量％，以及在表面下面的周期性排列的空腔层。 本发明还涉及一种用于制造该半导体衬底和由该半导体衬底制造的sSOI晶片的方法。

公开(公告)号：US07279700B2

公开(公告)日：2007-10-09

申请号：US11266164

申请日：2005-11-03

申请人： Dirk Dantz ,  Andreas Huber ,  Reinhold Wahlich ,  Brian Murphy

发明人： Dirk Dantz ,  Andreas Huber ,  Reinhold Wahlich ,  Brian Murphy

IPC分类号： H01L29/06

CPC分类号： H01L21/76251 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02658

摘要： A semiconductor substrate useful as a donor wafer is a single-crystal silicon wafer having a relaxed, single-crystal layer containing silicon and germanium on its surface, the germanium content at the surface of the layer being in the range from 10% by weight to 100% by weight, and a layer of periodically arranged cavities below the surface. The invention also relates to a process for producing this semiconductor substrate and to an sSOI wafer produced from this semiconductor substrate.

摘要翻译： 可用作施主晶片的半导体衬底是其表面上具有含有硅和锗的松弛的单晶层的单晶硅晶片，该层表面的锗含量在10重量％至 100重量％，以及在表面下面的周期性排列的空腔层。 本发明还涉及一种用于制造该半导体衬底和由该半导体衬底制造的sSOI晶片的方法。

公开(公告)号：US07491966B2

公开(公告)日：2009-02-17

申请号：US11157260

申请日：2005-06-21

申请人： Dirk Dantz ,  Andreas Huber ,  Reinhold Wahlich ,  Brian Murphy

发明人： Dirk Dantz ,  Andreas Huber ,  Reinhold Wahlich ,  Brian Murphy

IPC分类号： H01L29/06

CPC分类号： H01L21/187 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/76251

摘要： A process for producing a semiconductor substrate comprising a carrier wafer and a layer of single-crystalline semiconductor material: a) producing a layer containing recesses at the surface of a donor wafer of single-crystalline semiconductor material, b) joining the surface of the donor wafer containing recesses to the carrier wafer, c) heat treating to close the recesses at the interface between the carrier wafer and the donor wafer to form a layer of cavities within the donor wafer, and d) splitting the donor wafer along the layer of cavities, resulting in a layer of semiconductor material on the carrier wafer. Semiconductor substrates prepared thusly may have a single-crystalline semiconductor layer having a thickness of 100 nm or less, a layer thickness uniformity of 5% or less, and an HF defect density of 0.02/cm2 or less.

摘要翻译： 一种制造半导体衬底的方法，包括载体晶片和单晶半导体材料层：a）在单晶半导体材料的施主晶片的表面上产生包含凹陷的层，b）将所述供体的表面 晶片容纳凹槽到载体晶片，c）热处理以封闭载体晶片和施主晶片之间的界面处的凹槽，以在施主晶片内形成一层空腔，以及d）沿着该空腔层分裂施主晶片 ，从而在载体晶片上产生一层半导体材料。 因此制备的半导体衬底可以具有厚度为100nm以下，层厚均匀度为5％以下，HF缺陷密度为0.02 / cm 2以下的单晶半导体层。

公开(公告)号：US20060097317A1

公开(公告)日：2006-05-11

申请号：US11266164

申请日：2005-11-03

申请人： Dirk Dantz ,  Andreas Huber ,  Reinhold Wahlich ,  Brian Murphy

发明人： Dirk Dantz ,  Andreas Huber ,  Reinhold Wahlich ,  Brian Murphy

IPC分类号： H01L27/12 ,  H01L31/117

CPC分类号： H01L21/76251 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02658

摘要： A semiconductor substrate useful as a donor wafer is a single-crystal silicon wafer having a relaxed, single-crystal layer containing silicon and germanium on its surface, the germanium content at the surface of the layer being in the range from 10% by weight to 100% by weight, and a layer of periodically arranged cavities below the surface. The invention also relates to a process for producing this semiconductor substrate and to an sSOI wafer produced from this semiconductor substrate.

摘要翻译： 可用作施主晶片的半导体衬底是其表面上具有含有硅和锗的松弛的单晶层的单晶硅晶片，该层表面的锗含量在10重量％至 100重量％，以及在表面下面的周期性排列的空腔层。 本发明还涉及一种用于制造该半导体衬底和由该半导体衬底制造的sSOI晶片的方法。

公开(公告)号：US20050287767A1

公开(公告)日：2005-12-29

申请号：US11157260

申请日：2005-06-21

申请人： Dirk Dantz ,  Andreas Huber ,  Reinhold Wahlich ,  Brian Murphy

发明人： Dirk Dantz ,  Andreas Huber ,  Reinhold Wahlich ,  Brian Murphy

IPC分类号： H01L21/18 ,  H01L21/30 ,  H01L21/762 ,  H01L27/12

CPC分类号： H01L21/187 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/76251

摘要： A process for producing a semiconductor substrate comprising a carrier wafer and a layer of single-crystalline semiconductor material: a) producing a layer containing recesses at the surface of a donor wafer of single-crystalline semiconductor material, b) joining the surface of the donor wafer containing recesses to the carrier wafer, c) heat treating to close the recesses at the interface between the carrier wafer and the donor wafer to form a layer of cavities within the donor wafer, and d) splitting the donor wafer along the layer of cavities, resulting in a layer of semiconductor material on the carrier wafer. Semiconductor substrates prepared thusly may have a single-crystalline semiconductor layer having a thickness of 100 nm or less, a layer thickness uniformity of 5% or less, and an HF defect density of 0.02/cm2 or less.

摘要翻译： 一种制造半导体衬底的方法，包括载体晶片和单晶半导体材料层：a）在单晶半导体材料的施主晶片的表面上产生包含凹陷的层，b）将所述供体的表面 晶片容纳凹槽到载体晶片，c）热处理以封闭载体晶片和施主晶片之间的界面处的凹槽，以在施主晶片内形成一层空腔，以及d）沿着该空腔层分裂施主晶片 ，从而在载体晶片上产生一层半导体材料。 因此制备的半导体衬底可以具有厚度为100nm以下，层厚均匀度为5％以下，HF缺陷密度为0.02 / cm 2以下的单晶半导体层 。

公开(公告)号：US20090065891A1

公开(公告)日：2009-03-12

申请号：US12270042

申请日：2008-11-13

申请人： Dirk Dantz ,  Andreas Huber ,  Reinhold Wahlich ,  Brian Murphy

发明人： Dirk Dantz ,  Andreas Huber ,  Reinhold Wahlich ,  Brian Murphy

IPC分类号： H01L21/762 ,  H01L27/12

CPC分类号： H01L21/187 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/76251

摘要： A process for producing a semiconductor substrate comprising a carrier wafer and a layer of single-crystalline semiconductor material:a) producing a layer containing recesses at the surface of a donor wafer of single-crystalline semiconductor material,b) joining the surface of the donor wafer containing recesses to the carrier wafer,c) heat treating to close the recesses at the interface between the carrier wafer and the donor wafer to form a layer of cavities within the donor wafer, andd) splitting the donor wafer along the layer of cavities, resulting in a layer of semiconductor material on the carrier wafer. Semiconductor substrates prepared thusly may have a single-crystalline semiconductor layer having a thickness of 100 nm or less, a layer thickness uniformity of 5% or less, and an HF defect density of 0.02/cm2 or less.

摘要翻译： 一种制造半导体衬底的方法，包括载体晶片和单晶半导体材料层：a）在单晶半导体材料的施主晶片的表面上产生包含凹陷的层，b）将所述供体的表面 晶片容纳凹槽到载体晶片，c）热处理以封闭载体晶片和施主晶片之间的界面处的凹槽，以在施主晶片内形成一层空腔，以及d）沿着该空腔层分裂施主晶片 ，从而在载体晶片上产生一层半导体材料。 因此制备的半导体衬底可以具有厚度为100nm以下，层厚均匀度为5％以下，HF缺陷密度为0.02 / cm 2以下的单晶半导体层。

公开(公告)号：US20060138540A1

公开(公告)日：2006-06-29

申请号：US11314568

申请日：2005-12-21

申请人： Dirk Dantz ,  Andreas Huber ,  Brian Murphy ,  Reinhold Wahlich

发明人： Dirk Dantz ,  Andreas Huber ,  Brian Murphy ,  Reinhold Wahlich

IPC分类号： H01L27/12

CPC分类号： H01L21/76251 ,  C30B29/06 ,  C30B33/02

摘要： The invention relates to a semiconductor wafer, which, at its surface comprises a semiconductor surface layer with a thickness in the range from 3 nm to 200 nm having no hole defects, and which comprises an adjoining electrically insulating layer beneath the semiconductor surface layer.

摘要翻译： 本发明涉及半导体晶片，其表面包括厚度在3nm至200nm范围内的半导体表面层，该半导体表面层没有空穴缺陷，并且在半导体表面层下方包括邻接的电绝缘层。

公开(公告)号：US07122865B2

公开(公告)日：2006-10-17

申请号：US10853322

申请日：2004-05-25

申请人： Robert Hölzl ,  Dirk Dantz ,  Andreas Huber ,  Ulrich Lambert ,  Reinhold Wahlich

发明人： Robert Hölzl ,  Dirk Dantz ,  Andreas Huber ,  Ulrich Lambert ,  Reinhold Wahlich

IPC分类号： H01L27/01 ,  H01L27/12 ,  H01L31/0392

CPC分类号： H01L21/2007 ,  H01L21/76254

摘要： An SOI wafer, includes a substrate made from silicon, an electrically insulating layer with a thermal conductivity of at least 1.6 W/(Km) and a single-crystal silicon layer with a thickness of from 10 nm to 10 μm, a standard deviation of at most 5% from the mean layer thickness and a density of at most 0.5 HF defects/cm2.A process is for producing an SOI wafer of this type, in which a substrate wafer made from silicon is joined to a donor wafer via a layer of the electrically insulating material which has previously been applied. The donor wafer bears a donor layer of single-crystal silicon, with a concentration of vacancies of at most 1012/cm3 and of vacancy agglomerates of at most 105/cm3. After the wafers have been joined, the thickness of the donor wafer is reduced in such a manner that the single-crystal silicon layer having these properties is formed from the donor layer, this single-crystal silicon layer being joined to the substrate wafer via the layer of electrically insulating material.

摘要翻译： SOI晶片包括由硅制成的衬底，具有至少1.6W /（Km）的热导率和厚度为10nm至10μm的单晶硅层的电绝缘层，标准偏差 从平均层厚度至多5％，密度至多为0.5HF缺陷/ cm 2。 一种制造这种SOI晶片的方法，其中由硅制成的衬底晶片通过预先施加的电绝缘材料层与施主晶片接合。 供体晶片承载单晶硅的施主层，其空位浓度至多为10 12 / cm 3，空位团聚体最多为10 ^{5/3/3。 在晶片已经接合之后，施主晶片的厚度被减小，使得具有这些性质的单晶硅层由施主层形成，该单晶硅层通过该晶体管接合到衬底晶片 电绝缘材料层。}

公开(公告)号：US20060145188A1

公开(公告)日：2006-07-06

申请号：US11324874

申请日：2006-01-03

申请人： Dirk Dantz ,  Andreas Huber ,  Reinhold Wahlich

发明人： Dirk Dantz ,  Andreas Huber ,  Reinhold Wahlich

IPC分类号： H01L31/109

CPC分类号： C30B25/02 ,  C30B29/52 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/0251

摘要： A semiconductor wafer has a monocrystalline silicon layer and a graded silicon-germanium layer adjacent thereto, of thickness d and composition Si1-xGex, where x represents the proportion of germanium and 0 0.5·x(d). The wafer may be further processed, in which process a layer of the semiconductor wafer is transferred to a substrate wafer.

摘要翻译： 半导体晶片具有单晶硅层和与其相邻的梯度硅 - 锗层，厚度d和组成Si 1-x N x X x，其中x表示 锗和0 0.5.x（d）。 可以进一步处理晶片，在该过程中，将半导体晶片的层转移到衬底晶片。