公开(公告)号：US07279700B2

公开(公告)日：2007-10-09

申请号：US11266164

申请日：2005-11-03

申请人： Dirk Dantz ,  Andreas Huber ,  Reinhold Wahlich ,  Brian Murphy

发明人： Dirk Dantz ,  Andreas Huber ,  Reinhold Wahlich ,  Brian Murphy

IPC分类号： H01L29/06

CPC分类号： H01L21/76251 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02658

摘要： A semiconductor substrate useful as a donor wafer is a single-crystal silicon wafer having a relaxed, single-crystal layer containing silicon and germanium on its surface, the germanium content at the surface of the layer being in the range from 10% by weight to 100% by weight, and a layer of periodically arranged cavities below the surface. The invention also relates to a process for producing this semiconductor substrate and to an sSOI wafer produced from this semiconductor substrate.

摘要翻译： 可用作施主晶片的半导体衬底是其表面上具有含有硅和锗的松弛的单晶层的单晶硅晶片，该层表面的锗含量在10重量％至 100重量％，以及在表面下面的周期性排列的空腔层。 本发明还涉及一种用于制造该半导体衬底和由该半导体衬底制造的sSOI晶片的方法。

公开(公告)号：US07803695B2

公开(公告)日：2010-09-28

申请号：US12270042

申请日：2008-11-13

申请人： Dirk Dantz ,  Andreas Huber ,  Reinhold Wahlich ,  Brian Murphy

发明人： Dirk Dantz ,  Andreas Huber ,  Reinhold Wahlich ,  Brian Murphy

IPC分类号： H01L21/30

CPC分类号： H01L21/187 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/76251

摘要： A process for producing a semiconductor substrate comprising a carrier wafer and a layer of single-crystalline semiconductor material:a) producing a layer containing recesses at the surface of a donor wafer of single-crystalline semiconductor material,b) joining the surface of the donor wafer containing recesses to the carrier wafer,c) heat treating to close the recesses at the interface between the carrier wafer and the donor wafer to form a layer of cavities within the donor wafer, andd) splitting the donor wafer along the layer of cavities, resulting in a layer of semiconductor material on the carrier wafer. Semiconductor substrates prepared thusly may have a single-crystalline semiconductor layer having a thickness of 100 nm or less, a layer thickness uniformity of 5% or less, and an HF defect density of 0.02/cm2 or less.

摘要翻译： 一种制造半导体衬底的方法，包括载体晶片和单晶半导体材料层：a）在单晶半导体材料的施主晶片的表面上产生包含凹陷的层，b）将所述供体的表面 晶片容纳凹槽到载体晶片，c）热处理以关闭在载体晶片和施主晶片之间的界面处的凹槽，以在施主晶片内形成一层空腔，以及d）沿着该空腔层分裂供体晶片 ，从而在载体晶片上产生一层半导体材料。 因此制备的半导体衬底可以具有厚度为100nm以下，层厚均匀度为5％以下，HF缺陷密度为0.02 / cm 2以下的单晶半导体层。

公开(公告)号：US20070281441A1

公开(公告)日：2007-12-06

申请号：US11775475

申请日：2007-07-10

申请人： Dirk Dantz ,  Andreas Huber ,  Reinhold Wahlich ,  Brian Murphy

发明人： Dirk Dantz ,  Andreas Huber ,  Reinhold Wahlich ,  Brian Murphy

IPC分类号： H01L21/20

CPC分类号： H01L21/76251 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02658

摘要： A semiconductor substrate useful as a donor wafer is a single-crystal silicon wafer having a relaxed, single-crystal layer containing silicon and germanium on its surface, the germanium content at the surface of the layer being in the range from 10% by weight to 100% by weight, and a layer of periodically arranged cavities below the surface. The invention also relates to a process for producing this semiconductor substrate and to an sSOI wafer produced from this semiconductor substrate.

摘要翻译： 可用作施主晶片的半导体衬底是其表面上具有含有硅和锗的松弛的单晶层的单晶硅晶片，该层表面的锗含量在10重量％至 100重量％，以及在表面下面的周期性排列的空腔层。 本发明还涉及一种用于制造该半导体衬底和由该半导体衬底制造的sSOI晶片的方法。

公开(公告)号：US07491966B2

公开(公告)日：2009-02-17

申请号：US11157260

申请日：2005-06-21

申请人： Dirk Dantz ,  Andreas Huber ,  Reinhold Wahlich ,  Brian Murphy

发明人： Dirk Dantz ,  Andreas Huber ,  Reinhold Wahlich ,  Brian Murphy

IPC分类号： H01L29/06

CPC分类号： H01L21/187 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/76251

摘要： A process for producing a semiconductor substrate comprising a carrier wafer and a layer of single-crystalline semiconductor material: a) producing a layer containing recesses at the surface of a donor wafer of single-crystalline semiconductor material, b) joining the surface of the donor wafer containing recesses to the carrier wafer, c) heat treating to close the recesses at the interface between the carrier wafer and the donor wafer to form a layer of cavities within the donor wafer, and d) splitting the donor wafer along the layer of cavities, resulting in a layer of semiconductor material on the carrier wafer. Semiconductor substrates prepared thusly may have a single-crystalline semiconductor layer having a thickness of 100 nm or less, a layer thickness uniformity of 5% or less, and an HF defect density of 0.02/cm2 or less.

摘要翻译： 一种制造半导体衬底的方法，包括载体晶片和单晶半导体材料层：a）在单晶半导体材料的施主晶片的表面上产生包含凹陷的层，b）将所述供体的表面 晶片容纳凹槽到载体晶片，c）热处理以封闭载体晶片和施主晶片之间的界面处的凹槽，以在施主晶片内形成一层空腔，以及d）沿着该空腔层分裂施主晶片 ，从而在载体晶片上产生一层半导体材料。 因此制备的半导体衬底可以具有厚度为100nm以下，层厚均匀度为5％以下，HF缺陷密度为0.02 / cm 2以下的单晶半导体层。

公开(公告)号：US20060097317A1

公开(公告)日：2006-05-11

申请号：US11266164

申请日：2005-11-03

申请人： Dirk Dantz ,  Andreas Huber ,  Reinhold Wahlich ,  Brian Murphy

发明人： Dirk Dantz ,  Andreas Huber ,  Reinhold Wahlich ,  Brian Murphy

IPC分类号： H01L27/12 ,  H01L31/117

CPC分类号： H01L21/76251 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02658

摘要： A semiconductor substrate useful as a donor wafer is a single-crystal silicon wafer having a relaxed, single-crystal layer containing silicon and germanium on its surface, the germanium content at the surface of the layer being in the range from 10% by weight to 100% by weight, and a layer of periodically arranged cavities below the surface. The invention also relates to a process for producing this semiconductor substrate and to an sSOI wafer produced from this semiconductor substrate.

摘要翻译： 可用作施主晶片的半导体衬底是其表面上具有含有硅和锗的松弛的单晶层的单晶硅晶片，该层表面的锗含量在10重量％至 100重量％，以及在表面下面的周期性排列的空腔层。 本发明还涉及一种用于制造该半导体衬底和由该半导体衬底制造的sSOI晶片的方法。

公开(公告)号：US20050287767A1

公开(公告)日：2005-12-29

申请号：US11157260

申请日：2005-06-21

申请人： Dirk Dantz ,  Andreas Huber ,  Reinhold Wahlich ,  Brian Murphy

发明人： Dirk Dantz ,  Andreas Huber ,  Reinhold Wahlich ,  Brian Murphy

IPC分类号： H01L21/18 ,  H01L21/30 ,  H01L21/762 ,  H01L27/12

CPC分类号： H01L21/187 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/76251

摘要： A process for producing a semiconductor substrate comprising a carrier wafer and a layer of single-crystalline semiconductor material: a) producing a layer containing recesses at the surface of a donor wafer of single-crystalline semiconductor material, b) joining the surface of the donor wafer containing recesses to the carrier wafer, c) heat treating to close the recesses at the interface between the carrier wafer and the donor wafer to form a layer of cavities within the donor wafer, and d) splitting the donor wafer along the layer of cavities, resulting in a layer of semiconductor material on the carrier wafer. Semiconductor substrates prepared thusly may have a single-crystalline semiconductor layer having a thickness of 100 nm or less, a layer thickness uniformity of 5% or less, and an HF defect density of 0.02/cm2 or less.

摘要翻译： 一种制造半导体衬底的方法，包括载体晶片和单晶半导体材料层：a）在单晶半导体材料的施主晶片的表面上产生包含凹陷的层，b）将所述供体的表面 晶片容纳凹槽到载体晶片，c）热处理以封闭载体晶片和施主晶片之间的界面处的凹槽，以在施主晶片内形成一层空腔，以及d）沿着该空腔层分裂施主晶片 ，从而在载体晶片上产生一层半导体材料。 因此制备的半导体衬底可以具有厚度为100nm以下，层厚均匀度为5％以下，HF缺陷密度为0.02 / cm 2以下的单晶半导体层 。

公开(公告)号：US20090065891A1

公开(公告)日：2009-03-12

申请号：US12270042

申请日：2008-11-13

申请人： Dirk Dantz ,  Andreas Huber ,  Reinhold Wahlich ,  Brian Murphy

发明人： Dirk Dantz ,  Andreas Huber ,  Reinhold Wahlich ,  Brian Murphy

IPC分类号： H01L21/762 ,  H01L27/12

CPC分类号： H01L21/187 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/76251

摘要： A process for producing a semiconductor substrate comprising a carrier wafer and a layer of single-crystalline semiconductor material:a) producing a layer containing recesses at the surface of a donor wafer of single-crystalline semiconductor material,b) joining the surface of the donor wafer containing recesses to the carrier wafer,c) heat treating to close the recesses at the interface between the carrier wafer and the donor wafer to form a layer of cavities within the donor wafer, andd) splitting the donor wafer along the layer of cavities, resulting in a layer of semiconductor material on the carrier wafer. Semiconductor substrates prepared thusly may have a single-crystalline semiconductor layer having a thickness of 100 nm or less, a layer thickness uniformity of 5% or less, and an HF defect density of 0.02/cm2 or less.

摘要翻译： 一种制造半导体衬底的方法，包括载体晶片和单晶半导体材料层：a）在单晶半导体材料的施主晶片的表面上产生包含凹陷的层，b）将所述供体的表面 晶片容纳凹槽到载体晶片，c）热处理以封闭载体晶片和施主晶片之间的界面处的凹槽，以在施主晶片内形成一层空腔，以及d）沿着该空腔层分裂施主晶片 ，从而在载体晶片上产生一层半导体材料。 因此制备的半导体衬底可以具有厚度为100nm以下，层厚均匀度为5％以下，HF缺陷密度为0.02 / cm 2以下的单晶半导体层。

公开(公告)号：US20060138540A1

公开(公告)日：2006-06-29

申请号：US11314568

申请日：2005-12-21

申请人： Dirk Dantz ,  Andreas Huber ,  Brian Murphy ,  Reinhold Wahlich

发明人： Dirk Dantz ,  Andreas Huber ,  Brian Murphy ,  Reinhold Wahlich

IPC分类号： H01L27/12

CPC分类号： H01L21/76251 ,  C30B29/06 ,  C30B33/02

摘要： The invention relates to a semiconductor wafer, which, at its surface comprises a semiconductor surface layer with a thickness in the range from 3 nm to 200 nm having no hole defects, and which comprises an adjoining electrically insulating layer beneath the semiconductor surface layer.

摘要翻译： 本发明涉及半导体晶片，其表面包括厚度在3nm至200nm范围内的半导体表面层，该半导体表面层没有空穴缺陷，并且在半导体表面层下方包括邻接的电绝缘层。

公开(公告)号：US07052948B2

公开(公告)日：2006-05-30

申请号：US10481537

申请日：2002-06-27

申请人： Brian Murphy ,  Reinhold Wahlich ,  Rüdiger Schmolke ,  Wilfried Von Ammon ,  James Moreland

发明人： Brian Murphy ,  Reinhold Wahlich ,  Rüdiger Schmolke ,  Wilfried Von Ammon ,  James Moreland

IPC分类号： H01L21/8238

CPC分类号： H01L21/3223 ,  H01L21/76251

摘要： The invention relates to a film or a layer made of semi-conducting material with low defect density in the thin layer, and a SOI-disk with a thin silicon layer exhibiting low surface roughness, defect density and thickness variations. The invention also relates to a method for producing a film or a layer made of semi-conductive material. Said method comprises the following steps: a) producing structures from a semi-conductive material with periodically repeated recesses which have a given geometrical structure, b) thermally treating the surface structured material until a layer with periodically repeated hollow spaces is formed under a closed layer on the surface of the material, c) separating the closed layer on the surface along the layer of hollow spaces from the remainder of the semi-conductive material.

摘要翻译： 本发明涉及在薄层中具有低缺陷密度的半导体材料制成的膜或层，以及具有低表面粗糙度，缺陷密度和厚度变化的薄硅层的SOI-盘。 本发明还涉及一种制造薄膜或由半导体材料制成的层的方法。 所述方法包括以下步骤：a）从具有给定几何结构的周期性重复凹槽的半导体材料制造结构，b）热处理表面结构材料，直到形成具有周期性重复的中空空间的层， 在所述材料的表面上，c）沿着所述中空空间层与所述半导体材料的其余部分分离所述表面上的所述封闭层。

公开(公告)号：US08395164B2

公开(公告)日：2013-03-12

申请号：US13225826

申请日：2011-09-06

申请人： Brian Murphy ,  Reinhold Wahlich

发明人： Brian Murphy ,  Reinhold Wahlich

IPC分类号： H01L29/15

CPC分类号： H01L21/76254

摘要： Silicon carbide substrate wafers are prepared by transferring a monocrystalline silicon layer from a donor wafer onto a handle wafer, the silicon layer being implanted with carbon and annealed to form a monocrystalline SiC layer prior to or after transfer of the silicon layer.

摘要翻译： 通过将单晶硅层从施主晶片转移到处理晶片上来制备碳化硅衬底晶片，硅层被注入碳并在硅层转移之前或之后退火以形成单晶SiC层。