- 专利标题： Method for manufacturing light emitting device
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申请号： US11259689申请日： 2005-10-26
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公开(公告)号： US20060102910A1公开(公告)日： 2006-05-18
- 发明人: Shunpei Yamazaki , Masahiko Hayakawa , Koichiro Kamata , Hiroyuki Tomatsu , Hisao Ikeda , Junichiro Sakata
- 申请人： Shunpei Yamazaki , Masahiko Hayakawa , Koichiro Kamata , Hiroyuki Tomatsu , Hisao Ikeda , Junichiro Sakata
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 优先权： JP2004-316742 20041029
- 主分类号： H01L31/12
- IPC分类号： H01L31/12
摘要：
An object of the present invention is to provide a new light emitting element with little initial deterioration, and a display device in which initial deterioration is reduced and variation in deterioration over time is reduced by a new method for driving a display device having the light emitting element. One feature of the invention is that a display device comprising a light emitting element including a first electrode, a second electrode opposed to the first electrode, and a mixed layer of metal oxide and an organic compound provided between the first electrode and the second electrode is subjected to aging drive.
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